Interpretation of transconductance dispersion in GaAs MESFET using deep level transient spectroscopy

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 190-195

  Choi, Kyoung Jin ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM ARSENIDE; SUPERCONDUCTING TRANSITION TEMPERATURE; TRANSCONDUCTANCE;

NEGATIVE TRANSCONDUCTANCE DISPERSION;

MESFET DEVICES;

EID: 0035249547     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902715     Document Type: Article

References (14)

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