Physical investigation of trap-related effects in power HFETs and their reliability implications

IEEE Transactions on Device and Materials Reliability

Volumn 2, Issue 3, 2002, Pages 65-71

  Mazzanti, Andrea ^a,b,c   Verzellesi, Giovanni ^a,b,c   Sozzi, Giovanna ^d   Menozzi, Roberto ^a,d   Lanzieri, Claudio ^e   Canali, Claudio ^a,b,c  

^a IEEE   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c INFM   (Italy)

^d UNIVERSITY OF PARMA   (Italy)

^e ALENIA SPAZIO   (Italy)

Author keywords

FETs; Gallium compounds; Hot carriers; Microwave power FETs; Reliability

Indexed keywords

HYDRODYNAMIC MODELS; MICROWAVE POWER; REVERSE GATE CURRENT;

COMPUTER SIMULATION; GALLIUM COMPOUNDS; HOT CARRIERS; HYDRODYNAMICS; IONIZATION; RELIABILITY THEORY;

FIELD EFFECT TRANSISTORS;

EID: 33645598289     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2002.804512     Document Type: Article

References (19)

1. A. Watanabe, K. Fujimoto, M. Oda, T. Nakatsuka, and A. Tamura, "Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effect," in Proc. IEEE Int. Reliability Physics Symp., 1992, pp. 127-130.
2. H. Hasegawa, K. Katsukawa, T. Itoh, T. Noguchi, and Y. Kaneko, "High reliability power GaAs MESFET under RF overdrive condition," in IEEE MTT-S Dig. Tech. Papers, 1993, pp. 289-292.
3. Y. A. Tkachenko, Y. Lan, D. S. Whitefield, C. J. Wei, J. C. M. Hwang, L. Aucoin, and S. Shanfield, "Gradual degradation under RF overdrive of power GaAs field-effect transistors," presented at the GaAs Reliability Workshop, 1993.
4. K. A. Christianson, W. T. Anderson, and C. Moglestue, "Field dependent failure mechanisms in AlGaAs-GaAs HEMTs," presented at the GaAs Reliability Workshop, 1994.
5. Y. A. Tkachenko, C. J. Wei, J. C. M. Hwang, T. D. Harris, R. D. Grober, D. M. Hwang, L. Aucoin, and S. Shanfield, "Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors," in Proc. IEEE Microwave Millimeter Wave Monolithic Circuits Symp., 1995, pp. 115-118.
6. R. Menozzi, P. Cova, C. Canali, and F. Fantini, "Breakdown walkout in pseudomorphic HEMTs," IEEE Trans. Electron Devices, vol. 43, pp. 543-546, Apr. 1996.
7. R. Menozzi, M. Borgarino, Y. Baeyens, M. Van Hove, and F. Fantini, "On the effects of hot electrons on the dc and rf characteristics of latticematched InAlAs-InGaAs-InP HEMTs," IEEE Microwave Guided Wave Lett., vol. 7, pp. 3-5, Jan. 1997.
8. A. Wakita, H. Rohdin, C.-Y. Su, N. Moll, A. Nagy, and V. M. Robbins, "Drain resistance degradation under high fields in AlInAs-GaInAs MODFETs," in Proc. Int. Conf. InP and Related Materials, 1997, pp. 376-379.
9. R. E. Leoni, III, J. Bao, J. Bu, X. Du, M. S. Shirokov, and J. C. M. Hwang, "Mechanism for recoverable power drift in PHEMTs," IEEE Trans. Electron Devices, vol. 47, pp. 498-506, Mar. 2000.
10. 0.75As-GaAs power HFETs under off-state and on-state electrical stress conditions," IEEE Trans. Electron Devices, vol. 47, pp. 261-268, Feb. 2000.
11. D. Dieci, G. Sozzi, R. Menozzi, E. Tediosi, C. Lanzieri, and C. Canali, "Electric-field-related reliability of AlGaAs-GaAs power HFETs: Bias dependence and correlation with breakdown," IEEE Trans. Electron Devices, vol. 48, pp. 1929-1937, Sept. 2001.
12. J. Haruyama, H. Negishi, Y. Nishimura, and Y. Nashimoto, "Substrate-related kink effects with a strong light-sensitivity in AlGaAs-InGaAs PHEMT," IEEE Trans. Electron Devices, vol. 44, pp. 25-33, Jan. 1997.
13. B. Georgescu, M. A. Py, A. Souifi, G. Post, and G. Guillot, "New aspects and mechanism of kink effect in InAlAs-InGaAs-InP inverted HFETs," IEEE Electron Device Lett., vol. 19, pp. 154-156, May 1998.
14. T. Suemitsu, T. Enoki, N. Sano, M. Tomizawa, and Y. Ishii, "An analysis of the kink phenomena in InAlAs-InGaAs HEMTs using two-dimensional device simulation," IEEE Trans. Electron Devices, vol. 45, pp. 2390-2399, Dec. 1998.
15. M. H. Somerville, A. Ernst, and J. A. del Alamo, "A physical model for the kink effect in InAlAs-InGaAs HEMTs," IEEE Trans. Electron Devices, vol. 47, pp. 922-930, May 2000.
16. K. Horio and A. Wakabayashi, "Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs," IEEE Trans. Electron Devices, vol. 47, pp. 2270-2276, Dec. 2000.
17. "ISE TCAD manuals," Integrated Systems Engineering AG, Zurich, Switzerland, 1999.
18. E. Tediosi, M. Borgarino, G. Verzellesi, G. Sozzi, and R. Menozzi, "Surface effects on turn-off characteristics of AlGaAs-GaAs HFETs," Electron. Lett., vol. 37, pp. 719-720, 2001.
19. G. Sozzi and sR. Menozzi, "High-electric-field effects and degradation of AlGaAs-GaAs power HFETs: A numerical study," Microelectron. Reliabil., vol. 42, pp. 53-59, 2001.