Origin of hole-like peaks in current deep level transient spectroscopy of n-channel AlGaAs/GaAs heterostructure field-effect transistors

Journal of Applied Physics

Volumn 94, Issue 8, 2003, Pages 5297-5301

  Cavallini, A ^a   Verzellesi, G ^b   Basile, A F ^b   Canali, C ^b   Castaldini, A ^a   Zanoni, E ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

SURFACE STATES;

FIELD EFFECT TRANSISTORS;

EID: 0242272328     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1611629     Document Type: Article

References (19)

1. R. Yeats, D. C. D'Avanzo, K. Chan, N. Fernandez, T. W. Taylor, and C. Vogel, IEDM Tech. Dig., 842 (1988).
2. J. C. Huang, G. S. Jackson, S. Shanfield, A. Platzker, P. K. Saledas, and C. Weichert, IEEE Trans. Microwave Theory Tech. 41, 752 (1993).
3. W. Kruppa and J. B. Boos, IEEE Trans. Electron Devices 44, 687 (1997).
4. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
5. M. G. Alderstein, Electron. Lett. 12, 297 (1976).
6. S. R. Blight, R. H. Wallis, and H. Thomas, IEEE Trans. Electron Devices 33, 1447 (1986).
7. J. P. Harrang, A. Tardella, M. Rosso, P. Alnot, and J. F. Peray, J. Appl. Phys. 61, 1931 (1987).
8. R. Magno, R. Shelby, and W. T. Anderson, J. Appl. Phys. 66, 5613 (1989).
9. J. H. Zhao, IEEE Trans. Electron Devices 37, 1235 (1990).
10. G. Meneghesso, A. Paccagnella, Y. Haddab, C. Canali, and E. Zanoni, Appl. Phys. Lett. 69, 1411 (1996).
11. V. R. Balakrishnan, V. Kumar, and S. Ghosh, IEEE Trans. Electron Devices 44, 1060 (1997).
12. K. J. Choi and J.-L. Lee, IEEE Trans. Electron Devices 48, 190 (2001).
13. S.-H. Lo and C.-P. Lee, IEEE Trans. Electron Devices 41, 1504 (1994).
14. K. Horio and T. Yamada, IEEE Trans. Electron Devices 46, 648 (1999).
15. A. Mazzanti, G. Verzellesi, C. Canali, G. Meneghesso, and E. Zanoni, IEEE Electron Device Lett. 23, 383 (2002).
16. G. Verzellesi, A. Mazzanti, A. F. Basile, A. Boni, E. Zanoni, and C. Canali, IEEE Trans. Electron Devices 50, 733 (2003).
17. P. M. Mooney, J. Appl. Phys. 67, RI (1990).
18. DESSIS 8.0 Reference Manual, ISE Integrated Systems Engineering AG, Zurich, Switzerland.
19. W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952).