-
1
-
-
0026928118
-
-
IEEE Trans. Electron Devices, vol. 39, pp. 2007-2014, Sept. 1992.
-
L. D. Nguyen, A. S. Brown, M. A. Thompson, and L. M. Jelloian, 50-nm self-aligned-gate pseudomorphic AlInAs/GalnAs high-electron mobility transistors, IEEE Trans. Electron Devices, vol. 39, pp. 2007-2014, Sept. 1992.
-
50-nm Self-aligned-gate Pseudomorphic AlInAs/GalnAs High-electron Mobility Transistors
-
-
Nguyen, L.D.1
Brown, A.S.2
Thompson, M.A.3
Jelloian, L.M.4
-
2
-
-
0029342529
-
-
IEEE Microwave Guided Wave Lett., vol. 5, pp. 230-232, July 1995
-
max, IEEE Microwave Guided Wave Lett., vol. 5, pp. 230-232, July 1995.
-
max
-
-
Smith, P.M.1
-
3
-
-
0026152278
-
-
IEEE Microwave Guided Wave Lett., vol. 1, pp. 114-116, May 1991.
-
K. H. G. Duh, P.C. Chao, S. M. J. Liu, P. Ho, M. Y. Kao, and J. M. Ballingall, A super low-noise 0.1-μm T-gate InAlAs/InGaAs/InP HEMT, IEEE Microwave Guided Wave Lett., vol. 1, pp. 114-116, May 1991.
-
A Super Low-noise 0.1-μm T-gate InAlAs/InGaAs/InP HEMT
-
-
Duh, K.H.G.1
Chao, P.C.2
Liu, S.M.J.3
Ho, P.4
Kao, M.Y.5
Ballingall, J.M.6
-
4
-
-
0029391835
-
-
IEEE Trans. Electron Devices, vol. 42, pp. 1717-1723, Oct. 1995.
-
W. Kruppa and J. B. Boos, Examination of the kink effect in InAlAs/InGaAs/InP HEMT's using sinusoidal and transient excitation, IEEE Trans. Electron Devices, vol. 42, pp. 1717-1723, Oct. 1995.
-
Examination of the Kink Effect in InAlAs/InGaAs/InP HEMT's Using Sinusoidal and Transient Excitation
-
-
Kruppa, W.1
Boos, J.B.2
-
5
-
-
0026135662
-
-
1-xAs HEMT's, IEEE Trans. Electron Devices, vol. 38, pp. 862-870, Apr. 1991.
-
1-xAs HEMT's, IEEE Trans. Electron Devices, vol. 38, pp. 862-870, Apr. 1991.
-
Frequency-dependent Characteristics and Trap Studies of Lattice-matched
-
-
Ng, G.I.1
Pavlidis, D.2
-
6
-
-
0026908731
-
-
Solid-State Electron., vol. 35, no. 8, pp. 1129-1137, 1992.
-
R. Sung and M. B. Das, Photo-induced current measurement for the characterization of deep-level traps in lattice-matched MODFET's on InP substrate, Solid-State Electron., vol. 35, no. 8, pp. 1129-1137, 1992.
-
Photo-induced Current Measurement for the Characterization of Deep-level Traps in Lattice-matched MODFET's on InP Substrate
-
-
Sung, R.1
Das, M.B.2
-
8
-
-
0027226795
-
-
Proc. Fifth Int. Conf. IPRM, 1993, pp. 420-423.
-
J. M. Dumas, P. Audren, J. Paugam, M. P. Favennec, C. Vuchener, and D. Lecrosnier, A study of parasitic effects in MBE-grown InAlAs/InGaAs/InAlAs HEMT's, in Proc. Fifth Int. Conf. IPRM, 1993, pp. 420-423.
-
A Study of Parasitic Effects in MBE-grown InAlAs/InGaAs/InAlAs HEMT's, in
-
-
Dumas, J.M.1
Audren, P.2
Paugam, J.3
Favennec, M.P.4
Vuchener, C.5
Lecrosnier, D.6
-
9
-
-
29944438274
-
-
Solid-State Electron., vol. 38, no. 10, pp. 1735-1741, 1995.
-
W. Kruppa and J. B. Boos, Deep-level trapping in ion-implanted InP JFET's, Solid-State Electron., vol. 38, no. 10, pp. 1735-1741, 1995.
-
Deep-level Trapping in Ion-implanted InP JFET's
-
-
Kruppa, W.1
Boos, J.B.2
-
10
-
-
0026242865
-
-
Electron. Lett., vol. 27, no. 21, pp. 1909-1910, 1991.
-
J. B. Boos and W. Kruppa, InAlAs/InGaAs/InP HEMT's with high breakdown voltages using double-recess gate process, Electron. Lett., vol. 27, no. 21, pp. 1909-1910, 1991.
-
InAlAs/InGaAs/InP HEMT's with High Breakdown Voltages Using Double-recess Gate Process
-
-
Boos, J.B.1
Kruppa, W.2
-
11
-
-
33747683907
-
-
m frequency dispersion measurement, Inst. Phys. Conf. Ser., no. 63, ch. 7, pp. 323-329.
-
m frequency dispersion measurement, Inst. Phys. Conf. Ser., no. 63, ch. 7, pp. 323-329.
-
Surface Analysis in GaAs MESFET' S by
-
-
Ozeki, M.1
Kodama, K.2
Shibatomi, A.3
-
12
-
-
0001226170
-
-
IEEE Trans. Electron Devices, vol. ED-33, pp. 1447-1453, Oct. 1986.
-
S. R. Blight, R. H. Wallis, and H. Thomas, Surface influence on the conductance DLTS spectra of GaAs, IEEE Trans. Electron Devices, vol. ED-33, pp. 1447-1453, Oct. 1986.
-
Surface Influence on the Conductance DLTS Spectra of GaAs
-
-
Blight, S.R.1
Wallis, R.H.2
Thomas, H.3
-
13
-
-
0022992228
-
-
Inst. Phys. Conf. Ser., no. 79, ch. 10, pp. 565-570.
-
M. Takikawa, K. Joshin, Y. Hirachi, and A. Shibatomi, Effects of surface state and DX center on low-frequency transconductance of high-electron-mobility-transistor, Inst. Phys. Conf. Ser., no. 79, ch. 10, pp. 565-570.
-
Effects of Surface State and DX Center on Low-frequency Transconductance of High-electron-mobility-transistor
-
-
Takikawa, M.1
Joshin, K.2
Hirachi, Y.3
Shibatomi, A.4
-
14
-
-
0002057819
-
-
IEEE Trans. Nucl. Sci, vol. NS-18, pp. 50-59, June 1971.
-
B. L. Gregory, S.S. Naik, and W. G. Oldham, Neutron produced trapping centers in junction field effect transistors, IEEE Trans. Nucl. Sci, vol. NS-18, pp. 50-59, June 1971.
-
-
-
Gregory, B.L.1
Naik, S.S.2
Oldham, W.G.3
Transistors, N.P.4
-
15
-
-
0037511169
-
-
Jpn. J. Appl. Phys., vol 14, no. 1, pp. 157-158, 1975.
-
O. Wada, S. Yanagisawa, and H. Takanashi, Evaluation of deep levels in semiconductors using field effect transconductance, Jpn. J. Appl. Phys., vol 14, no. 1, pp. 157-158, 1975.
-
Evaluation of Deep Levels in Semiconductors Using Field Effect Transconductance
-
-
Wada, O.1
Yanagisawa, S.2
Takanashi, H.3
-
16
-
-
0344574385
-
-
J. Appl. Phys., vol. 74, no. 2, pp. 1051-1056, 1993.
-
1-xAs by space charge spectroscopy, J. Appl. Phys., vol. 74, no. 2, pp. 1051-1056, 1993.
-
1-xAs by Space Charge Spectroscopy
-
-
Woeckinger, J.1
Jantsch, W.2
Wilamowski, Z.3
Koehler, K.4
-
17
-
-
84975445130
-
-
Proc. 4th Int. Conf. IPRM, 1992, pp. 136-139.
-
H. Hoenow, H. G. Bach, J. Boettcher, F. Gueissaz, H. Kuenzel, F. Scheffer, and C. Schramm, Deep level analysis of Si doped MBE grown InAlAs layers, in Proc. 4th Int. Conf. IPRM, 1992, pp. 136-139.
-
Deep Level Analysis of Si Doped MBE Grown InAlAs Layers, in
-
-
Hoenow, H.1
Bach, H.G.2
Boettcher, J.3
Gueissaz, F.4
Kuenzel, H.5
Scheffer, F.6
Schramm, C.7
-
18
-
-
84990634579
-
-
Phys. Slat. Sol, vol. 103, pp. 511-516, 1987.
-
K. Nakashima, S. Nojima, Y. Kawamura, and H. Asahi, Deep electron trapping centers in Si-doped InAlAs grown by molecular beam epitaxy, Phys. Slat. Sol, vol. 103, pp. 511-516, 1987.
-
Deep Electron Trapping Centers in Si-doped InAlAs Grown by Molecular Beam Epitaxy
-
-
Nakashima, K.1
Nojima, S.2
Kawamura, Y.3
Asahi, H.4
-
19
-
-
0027150822
-
-
Proc. 5th Int. Conf. IPRM, 1993, pp. 255-258.
-
+-InGaAs heterostructure FET's, in Proc. 5th Int. Conf. IPRM, 1993, pp. 255-258.
-
+-InGaAs Heterostructure FET's, in
-
-
Dumas, J.M.1
Audren, P.2
Favennec, M.P.3
Lecrosnier, D.4
Bahl, S.R.5
Del Alamo, J.A.6
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