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Volumn 44, Issue 5, 1997, Pages 687-692

Low-frequency transconductance dispersion in inalas/ingaas/inp hemt's with single-and double-recessed gate structures

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; DISPERSION (WAVES); FREQUENCY RESPONSE; GATES (TRANSISTOR); THERMAL EFFECTS; TRANSCONDUCTANCE; TRANSIENTS;

EID: 0031146219     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.568027     Document Type: Article
Times cited : (24)

References (19)
  • 2
    • 0029342529 scopus 로고    scopus 로고
    • IEEE Microwave Guided Wave Lett., vol. 5, pp. 230-232, July 1995
    • max, IEEE Microwave Guided Wave Lett., vol. 5, pp. 230-232, July 1995.
    • max
    • Smith, P.M.1
  • 14
    • 0002057819 scopus 로고    scopus 로고
    • IEEE Trans. Nucl. Sci, vol. NS-18, pp. 50-59, June 1971.
    • B. L. Gregory, S.S. Naik, and W. G. Oldham, Neutron produced trapping centers in junction field effect transistors, IEEE Trans. Nucl. Sci, vol. NS-18, pp. 50-59, June 1971.
    • Gregory, B.L.1    Naik, S.S.2    Oldham, W.G.3    Transistors, N.P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.