The impact of light on current DLTS and gate-lag transients of AlGaAs-GaAs HFETs

IEEE Electron Device Letters

Volumn 25, Issue 8, 2004, Pages 517-519

  Verzellesi, G ^a,b   Cavallini, A ^b,c   Basile, A F ^a,b   Castaldini, A ^b,c   Canali, C ^a,b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b INFM   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; ENERGY GAP; HETEROJUNCTIONS; HOLE TRAPS; IRRADIATION; PHOTONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

CHARGE CARRIER PROCESSES; GATE LAG TRANSIENTS; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; LIGHT IRRADIATION; MICROWAVE POWER FET; SURFACE DEEP LEVELS; TRANSIENT RESPONSE;

FIELD EFFECT TRANSISTORS;

EID: 3943102112     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831965     Document Type: Article

References (9)

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