Physics-based explanation of kink dynamics in AlGaAs/GaAs HFETs

IEEE Electron Device Letters

Volumn 23, Issue 7, 2002, Pages 383-385

  Mazzanti, A ^b,c   Verzellesi, G ^a,b,c   Canali, Claudio ^a,b,c   Meneghesso, G ^a,c,d   Zanoni, Enrico ^a,c,d  

^a IEEE   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c INFM   (Italy)

^d UNIVERSITY OF PADOVA   (Italy)

Author keywords

Deep levels; Heterostructure field effect transistors (HFETs); Kink effect; Numerical device simulation; Pulsed measurements

Indexed keywords

DRAIN CURRENT; DRAIN VOLTAGE; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR; HOLE EMISSION; KINK DYNAMICS; SURFACE DEEP ACCEPTORS;

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRODYNAMICS; ELECTRON EMISSION; HETEROJUNCTIONS; HOLE TRAPS; IMPACT IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SOLID STATE PHYSICS;

FIELD EFFECT TRANSISTORS;

EID: 0036645903     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.1015205     Document Type: Article

References (8)

1. An analysis of the kink phenomena in InAlAs/InGaAs HEMTs using two-dimensional device simulation
2. A physical model for the kink effect in InAlAs/InGaAs HEMTs
3. Numerical analysis of surface-state effects on kink phenomena of GaAs MESFETs
4. Substrate-related kink effects with a strong light-sensitivity in AlGaAs/InGaAs PHEMT
5. Dynamics of the kink effect in InAlAs/InGaAs HEMTs
6. Electric-field-related reliability of AlGaAs/GaAs power HFETs: Bias dependence and correlation with breakdown
7. 0.75As/GaAs power HFETs under off-state and on-state electrical stress conditions