Light sensitivity of current DLTS and its implications on the physics of DC-to-RF dispersion in AlGaAs-GaAs HFETs

IEEE Transactions on Electron Devices

Volumn 52, Issue 4, 2005, Pages 594-602

  Verzellesi, Giovanni ^a,b   Basile, Alberto F ^a,b   Cavallini, Anna ^b,c   Castaldini, Antonio ^b,c   Chini, Alessandro ^a,b   Canali, Claudio ^a,b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b INFM   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

Aluminum compounds; Gallium compounds; Microwave power FETs; Transient response

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; ELECTRON TRAPS; ENERGY GAP; HETEROJUNCTIONS; MICROWAVE DEVICES; PHOTOSENSITIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PROPERTIES;

ALUMINUM GALLIUM ARSENIDE; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFETS); MICROWAVE POWER FETS; NEGATIVE TRAP CHARGE DENSITY; SURFACE HOLE CONCENTRATION; SURFACE TRAP LEVELS;

FIELD EFFECT TRANSISTORS;

EID: 17444395960     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.845149     Document Type: Article

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