Expérimental evidence of surface conduction contributing to transconductance dispersion in GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 44, Issue 7, 1997, Pages 1060-1065

  Balakrishnan, V R ^a  

^a SOLID STATE PHYSICS LABORATORY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SIMULATION; SURFACE PROPERTIES; TRANSCONDUCTANCE;

CONDUCTANCE DEEP-LEVEL TRANSIENT SPECTROSCOPY; SURFACE CONDUCTION;

MESFET DEVICES;

EID: 0031175967     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.595932     Document Type: Article

References (24)

1. M. Ozeki, K. Kodama, and A. Shibatomi, "Surface analysis in GaAs MESFET's by gm frequency measurement," in Int. Symp. GaAs and Related Compounds, 1982, Inst. Conf. Ser. no. 63, pp. 323-328.
2. M. Ozeki, K. Kodama, M. Takikawa, and A. Shibatomi, "Analysis of electrical and optical properties of insulating film-GaAs interfaces using MESFET type structures," J. Vac. Sei. Techol. , vol. 21, no. 2, pp. 437-441, 1982.
3. T. M. Barton and P. H. Ladbrooke, "The role of the device surface on high-voltage behavior of the GaAs MESFET's," Solid State Electron. , vol. 29, no. 8, pp. 807-813, 1986.
4. J. Graffeuil, Z. Hadjoub, J. P. Fortea, and M. Pouysegur, "Analysis of capacitance and transconductance frequency dispersions in MESFET's for surface characterization," Solid State Electron. , vol. 29, no. 10, pp. 1087-1097, 1986.
5. W. Kruppa and J. B. Boos, "Low frequency gain dispersion in ionimplanted InP JFET's," Solid State Electron. , vol. 36, no. 10, pp. 1445-1453, 1993.
6. R. H. Wallis, A. Faucher, D. Pons, and P. R. Jay, "Surface and bulk traps in GaAs MESFET's," in Int. Symp. GaAs and Related Compounds, 1984, Inst. Phys. Conf. Ser. no. 74, pp. 287-292.
7. P. H. Ladbrooke and S. R. Blight, "Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implications for other rate dependent anomolies," IEEE Trans. Electron Devices, vol. 35, pp. 257-267, Mar. 1988.
8. J. H. Zhao, "Modeling the effects of surface states on DLTS spectra of GaAs MESFET's," IEEE Trans. Electron Devices, vol. 37, pp. 1235-1244, May 1990.
9. J. H. Zhao, R. Hwang, and Chang, "Transconductance spectroscopic approach to device level surface state characterization," IEEE Trans. Electron Devices, vol. 40, pp. 1172-1174, June 1993.
10. S. R. Blight, R. H. Wallis, and H. Thomas, "Surface influence on the conductance DLTS spectra of GaAs MESFET's," IEEE Trans. Electron Devices, vol. ED-33, pp. 1447, 1453, Oct. 1986.
11. J. H. Zhao, P. F. Tang, R. Hwang, and S. Chang, "Frequency dependence of transconductance on deep traps in GaAs MESFET's," J. Appl. Phys. , vol. 70, no. 3, pp. 1899-1901, 1991.
12. Z. Kachwalla, "Characterizing traps in MESFET's using internal transconductance (gm) frequency dispersion," Solid State Electron. , vol. 31, no. 8, pp. 1315-1320, 1988.
13. E. Kohn and H. L. Hartnagel, "On the interpretation of electrical measurements on the GaAs-MOS system," Solid State Electron. , vol. 21, pp. 409-416, 1978.
14. B. Weiss, E. Kohn, B. Bayraktaroglu, and H. L. Hartnagel, "Native oxides on GaAs MOSFETs: Annealing effects and inversion layer mobilities," in Int. Symp. GaAs and Related Compounds, 1976, Inst. Phys. Conf. Ser. no. 33a, pp. 168-178, 1976.
15. A. Zylbersztejn, G. Bert, and G. Nuzillat, "Hole traps and their effects in GaAs MESFET's," in Int. Symp. GaAs and Related Compounds, 1979, Inst. Phys. Conf. Ser. no. 45, pp. 315-325.
16. W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and Lindau, "A new and unified model for Schottky barrier and III-V insulator interface states formation," J. Vac. Sei. Technol, vol. 16, pp. 1422-1433, 1979.
17. "Unified defect model and beyond," J. Vac. Sei. Technol. , vol. 17, pp. 1019-1027, 1980.
18. "Nature of interface states at III-V insulator interfaces," in Int. Symp. GaAs and Related Compounds, 1980, Inst. Phys. Conf. Ser. no. 50, pp. 216-233.
19. H. Hasagawa and T. Sawada, "Dynamic properties of interface-state bands in GaAs anodic MOS system," J. Vac. Sei. Technol. , vol. 16, no. 5, pp. 1478-1482, 1979.
20. "Photoionization and thermal activation of compound semiconductor MOS-interfaces and origin of interface states," J. Vac. Sei. Technol. , vol. 21, no. 2, pp. 45762, 1982.
21. "On the electrical properties of semiconductor interfaces in metal-insulator-semiconductor structures and possible origin of interface states," Thin Solid Films, vol. 103, no. 1/2, pp. 119-140, 1983.
22. "Electrical modeling of compound semiconductor interface for FET device assessment," IEEE Trans. Electron Devices, vol. ED-27, pp. 1055-1061, June 1980.
23. H. Freier, "Contribution of surface states to MOS impedence," Appl. Phys. Lett. , vol. 10, no. 12, pp. 361-363, 1967.
24. K. Lehovec, "Frequency dependence of impedence of distributed surface states in MOS structures (Si-SiO2 )," Appl. Phys. Lett. , vol. 8, no. 2, pp. 48-50, 1966.