Failure mechanisms of AlGaAs/InGaAs pseudomorphic HEMT's: Effects due to hot electrons and modulation of trapped charge

Microelectronics Reliability

Volumn 37, Issue 7 SPEC. ISS., 1997, Pages 1121-1129

  Meneghesso, Gaudenzio ^a   De Bortoli, Eros ^a   Sala, Danila ^a   Zanoni, Enrico ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; GATES (TRANSISTOR); HOT CARRIERS; IONIZATION OF SOLIDS; MATHEMATICAL MODELS;

KINK EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031189466     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(96)00273-9     Document Type: Article

References (23)

1. Morkner, H., Frank, M. and Miller, D., A high performance 1.5 dB low noise GaAs PHEMT MMIC amplifier for low cost 1.5-8 GHz commercial applications. IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig., 1993, pp. 13-16.
2. Duh, K. H. G., Liu, S. M. J., Wang, S. C., Ho, P. and Chao, P. C., High performance Q-band 0.15 μm InGaAs HEMT MMIC LNA. IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symp. Dig., 1993, pp. 99-102.
3. Kasody, R. E., Dow, G. S., Sharma, A. K., Aust, M. V., Yamaguchi, D., Lai, R. L., Biedenbender, M., Tan, K. L. and Allen, B. R., A high efficiency V-band monolithic HEMT power amplifier. IEEE Microwave Guided Wave Lett., 1994, 4(9), 303-304.
4. Canali, C., Magistrali, F., Paccagnella, A., Sangalli, M., Tedesco, C. and Zanoni, E., Trap-related effects in AlGaAs/GaAs HEMTs. IEE Proceedings-G, 1991, vol. 138, no. 1, pp. 104-108.
5. Audren, P., Dumas, J. F., Mottet, S., Vuchener, C., Paugram, J. and Favennec, M. P., Stability of interfaces in pseudomorphic InGaAs HEMTs. Quality Reliab. Engng Int., 1992, 8, 279-282.
6. Saunders, N. L., Rezazadeh, A. A., Morgan, D. V., Thomas, H. and Hipwood, L. G., The long-term stability of n-AlGaAs/InGaAs/GaAs pseudomorphic HEMT's. Quality Reliab. Engng Int., 1991, 7, 331-337.
7. Christou, A., Hu, J. M. and Anderson, W. T., Reliability of InGaAs HEMTs on GaAs Substrates. Proc. IRPS, 1991, pp. 200-205.
8. Chao, P. C., Shur, M., Kao, M. Y. and Lee, B. R., Breakdown walkout in AlGaAs/GaAs HEMT's. IEEE Trans. Electron Devices, 1992, ED-39(3), 738-740.
9. Hori, Y. and Kuzuhara, M., Improved model for kink effect in AlGaAs/InGaAs heterojunction FET's. IEEE Trans. Electron Devices, 1994, ED-41(12), 2262-2267.
10. Zanoni, E., Meneghesso, G., Neviani, A., De Bortoli, E., Vendrame, L. and Rizzato, A., Hot-electron-induced effects, light emission, breakdown and reliability problems in GaAs MESFET's, AlGaAs/GaAs HEMT's and AlGaAs/InGaAs pseudomorphic HEMT's. Proc. of ESREF '94, 1994, pp. 261-272.
11. Sala, D., Vanzi, M., Zanoni, E., Meneghesso, G. and Magistrali, F., Failure mechanisms due to metallurgical interactions in commercially, available AlGaAs/GaAs and AlGas/InGaAs HEMT's. Microelectron. Reliab., in press.
12. Plana, R., Escotte, L., Llopis, O., Amine, H., Parra, T., Gayral, M. and Graffeuil, J., Noise in AlGaAs/InGaAs/GaAs pseudomorphic HEMT's from 10 Hz to 18 GHz. IEEE Trans. Electron Devices, 1993, ED-40(5), 852-858.
13. Meneghesso, G., Haddab, Y., De Bortoli, E., Paccagnella, A., Zanoni, E. and Canali, C., Study of low-temperature degradation of AlGaAs/InGaAs pseudomorphic HEMT's. 25th European Solid State Device Research Conference, 1995, pp. 169-172.
14. Sala, D., Kellner, W., Grave, T., Gatti, M., Meneghesso, G., Vendrame, L., Camporese, G., Bortolan, B. and Zanoni, E., Reliability of power pseudomorphic HEMT's submitted to thermal and hot-electron tests. Proc. of ESREF '95, 1995, pp. 435-440.
15. Tedesco, C., Zanoni, E., Canali, C., Bigliardi, S., Manfredi, M., Streit, D. C. and Anderson, W. T., Impact ionization and light emission in high-power pseudomorphic AlGaAs/InGaAs HEMT's. IEEE Trans. Electron Devices, 1993, ED-40(7), 1211-1214.
16. Lee, K., Shur, M. S., Valois, A. J., Robinson, G. Y., Zhu, X. C. and Van Der Ziel, A., A new technique for characterization of the "end" resistance in modulation-doped FET's. IEEE Trans. Electron Devices, 1984, ED-31(ED-10), 1394-1398.
17. Chan, S., Chang, C. S. and Day, D. Y. S., An analytical two-dimensional simulation for the GaAs MESFET drain-induced barrier lowering: a short-channel effect. IEEE Trans. Electron Devices, 1990, 37(5), 1182-1187.
18. Hori, Y. and Kuzuhara, M., Improved model for kink effect in AlGaAs/InGaAs heterojunction FET's. IEEE Trans. Electron Devices, 1994, 41(12), 2262-2267.
19. Nordheden, K., Chao, P. C., Kao, M. Y. and Swanson, A. W., HEMT degradation in hydrogen gas. IEEE Electron Device Lett., 1994, 15(5), 151-154.
20. Partain, L., Day, D. and Powell, R., Metastable impact ionization of traps model for lock-on in GaAs photoconductive switches. J. Appl. Phys., 1993, 74(1), 335-340.
21. Ladbrooke, P. H. and Blight, S. R., Low-field low-frequency dispersion of transconductance in GaAs MESFET's with implication for other rate-dependent anomalies. IEEE Trans. Electron Devices, 1988, ED-35(3), 257-267.
22. Paccagnella, A., Tedesco, C., Labat, N., Ouro Bodi, D., Touboul, A., Danto, Y. and Lanzieri, C., Analysis of deep levels in AlGaAs HEMTs by low frequency experimental techniques. Proc. of ESREF '92, October, 1992, pp. 171-174.
23. De Bortoli, E., Meneghesso, G., Vendrame, L., Zanoni, E. and Corva, G., Reliability and packaging. Internal report of the MANPOWER project, 1995.