Off-State Breakdown of GaAs PHEMTs: Review and New Data

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 1, 2004, Pages 54-62

  Menozzi, Roberto ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

Electric breakdown; Field effect transistors (FETs); Gallium compounds; Hot carriers; Microwave power FETs; Reliability

Indexed keywords

ACTIVATION ENERGY; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; HOT CARRIERS; LEAKAGE CURRENTS; THERMIONIC EMISSION;

DIELECTRIC DEPOSITION; DRAIN CURRENT; GATE DRAIN LEAKAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2342637723     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.824353     Document Type: Conference Paper

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