Utilization of an electron beam resist process to examine the effects of asymmetric gate recess on the device characteristics of AlGaAs/InGaAs PHEMT's

IEEE Transactions on Electron Devices

Volumn 44, Issue 12, 1997, Pages 2136-2142

  Grundbacher, Ronald ^a   Ballegeer, Dan ^a   Ketterson, Andrew A ^b   Kao, Y C ^b   Adesida, Ilesanmi ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC RESISTANCE; ELECTRON BEAMS; GATES (TRANSISTOR); METALLIZING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

ELECTRON BEAM RESISTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0031374752     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.644626     Document Type: Article

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