Off-state breakdown effects on gate leakage current in power pseudomorphic A1GaAs/InGaAs HEMT's

IEEE Electron Device Letters

Volumn 17, Issue 10, 1996, Pages 479-481

  Chou, Y C ^b   Li, G P ^b   Chen, Y C ^c   Wu, C S ^c   Yu, K K ^c   Midford, T A ^a,c  

^a IEEE

^b UNIVERSITY OF CALIFORNIA   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS; SIGNAL NOISE MEASUREMENT; TRANSCONDUCTANCE;

BREAKDOWN STRESS; DRAIN TO SOURCE CURRENT; GATE LEAKAGE CURRENT; GENERATION RECOMBINATION CURRENT; IMPACT IONIZATION CURRENT; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; THERMIONIC EMISSION GATE CURRENT; TUNNELING CURRENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030270274     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.537081     Document Type: Article

References (10)

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