Temperature dependence of breakdown voltage in InAlAs/InGaAs HEMTs: Theory and experiments

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 197-200

  Putnam, C S ^a   Somerville, M H ^a   del Alamo, J A ^a   Chao, P C ^a   Duh, K G ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRON TUNNELING; MATHEMATICAL MODELS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

TEMPERATURE DEPENDENCE; THERMIONIC FIELD EMISSION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030653813     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)