Physical modeling of off-state breakdown in power GaAs MESFETs

Solid-State Electronics

Volumn 47, Issue 4, 2003, Pages 621-631

  Kunihiro, Kazuaki ^a   Takahashi, Yuji ^a   Ohno, Yasuo ^a,b  

^a NEC CORPORATION   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

Avalanche breakdown; Gallium compounds; MESFETs; Microwave FET amplifiers; Simulation; Trapping

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON TRAPS; FERMI LEVEL; GATES (TRANSISTOR); IMPACT IONIZATION; MICROWAVE AMPLIFIERS; SEMICONDUCTING GALLIUM ARSENIDE;

AVALANCHE BREAKDOWN;

MESFET DEVICES;

EID: 0037395815     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00335-0     Document Type: Article

References (17)

1. Takenaka I., Ishikura K., Takahashi K., Kishi K., Ogasawara Y., Hasegawa K.et al. A 240 W power heterojunction FET with high efficiency for W-CDMA base stations. IEEE MTT-S Digest. 2001;645-648.
2. Ebihara K., Inoue K., Haematsu H., Yamaki F., Takahashi H., Fukaya J. An ultra broad band 300 W GaAs power FET for W-CDMA base stations. IEEE MTT-S Digest. 2001;649-652.
3. Frensley W.R. power-limiting breakdown effects in GaAs MESFET's. IEEE Trans. Electron Dev. 28(8):1981;962-970.
4. Wemple S.H., Niehaus W.C., Cox H.M., Dilorenzo J.V., Schlosser W.O. Control of gate-drain avalanche in GaAs MESFET's. IEEE Trans. Electron Dev. 27(6):1980;1013-1018.
5. Barton T.M., Ladbrooke P.H. The role of the device surface in the high voltage behaviour of the GaAs MESFET. Solid-State Electron. 29(8):1986;807-813.
6. Mizuta H., Yamaguchi K., Takahashi S. Surface potential effect on gate-drain avalanche breakdown in GaAs MESFET's. IEEE Trans. Electron Dev. 34(10):1987;2027-2033.
7. Li C.L., Barton T.M., Miles R.E. Avalanche breakdown and surface deep-level trap effects in GaAs MESFET's. IEEE Trans. Electron Dev. 40(4):1993;811-816.
8. Bahl S.R., Alamo J.A., Dickmann J., Schildberg S. Off-state breakdown in InAlAs/InGaAs MODFET's. IEEE Trans. Electron Dev. 42(1):1995;15-22.
9. Somerville M.H., Alamo J.A. A model for tunneling-limited breakdown in high-power HEMT's. Tech. Dig. IEDM. 1996;35-38.
10. Chao P., Shur M., Kao M., Lee B. Breakdown walkout in AlGaAs/GaAs HEMT's. IEEE Trans. Electron Dev. 39(3):1992;738-740.
11. Menozzi R., Cova P., Canali C., Fantini F. Breakdown walkout in pseudomorphic HEMT's. IEEE Trans. Electron Dev. 43(4):1996;543-546.
12. Chou Y., Li G., Yu K., Wu C., Chu P., Hou L., Midford T. Off-state breakdown walkout in high-power PHEMT's. IEEE GaAs IC Symp. 1996;42-45.
13. Ohno Y., Francis P., Nogome M., Takahashi Y. surface-states effects on GaAs FET electrical performance. IEEE Trans. Electron Dev. 46(1):1999;214-219.
14. Goto N., Ohno Y., Yano H. Two-dimensional numerical simulation of side-gating effect in GaAs MESFET's. IEEE Trans. Electron Dev. 37(8):1990;1821-1827.
15. Ito K, Mochizuki Y, Nashimoto Y, Mizuta T. Diagnostic scheme for electrical behavior of dielectrics/GaAs interfaces on electroreflectance spectroscopy. In: 25th Int. Symp. on Compound Semiconductors 1998: Fr2B-3.
16. Bulman G., Robbins V., Brennan K., Hess K., Stillman G. Experimental determination of impact ionization coefficients in. (100) GaAs IEEE Electron Dev. Lett. 4(6):1983;181-185.
17. Goossens R., Beebe S., Yu Z., Dutton R. An automatic biasing scheme for tracing arbitrarily shaped. I-V curves IEEE Trans. Comput. Aid. Des. Integr. Circ. Syst. 13(3):1994;310-317.