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Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2002, Pages 235-240

Innovative nitride passivation for pseudomorphic GaAs HEMTs and impact on device performance

(11) Chou, Yeong Chang a Nam, P a Li, G P b Lai, R a Kim, H K c Grundbacher, R a Ahlers, E a Ra, Y c Xu, Q b Biedenbender, M a Oki, A a

a NORTHROP GRUMMAN CORPORATION (United States)

b Irvine (United States)

c Betpel Material Research (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; HYDROGEN; INDUCTIVELY COUPLED PLASMA; NITRIDES; PASSIVATION; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

NITRIDE FILMS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036082054 PISSN: 00999512 EISSN: None Source Type: Journal
DOI: 10.1109/RELPHY.2002.996642 Document Type: Article

Times cited : (8)

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