High-efficiency L and S-band power amplifiers with high-breakdown GaAs-based pHEMTs

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1998, Pages 711-714

  Pusl, J A ^a   Widman, R D ^a   Brown, J J ^a   Hu, M ^a   Kaur, N ^a   BeZaire, M ^a   Nguyen, L D ^a  

^a BOEING COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; HIGH ELECTRON MOBILITY TRANSISTORS; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES;

MICROWAVE POWER AMPLIFIERS;

MICROWAVE AMPLIFIERS;

EID: 0031625415     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)