Off-state breakdown in power pHEMT's: The impact of the source

IEEE Transactions on Electron Devices

Volumn 45, Issue 9, 1998, Pages 1883-1889

  Somerville, Mark H ^a,b   Del Alamo, Jesus A ^a   Saunier, Paul ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

Breakdown voltage; Electric breakdown; Electron tunneling; Power hemt's power modfet's

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; GATES (TRANSISTOR); HETEROJUNCTIONS; MATHEMATICAL MODELS; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

DEPLETION REGION; ELECTROSTATIC INTERACTION; GATE DRAIN GAP; OFF STATE BREAKDOWN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032162454     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.711351     Document Type: Article

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