Reverse currents of Schottky gates of III-V MESFET/HEMTs: Field emission and tunnel currents

Solid-State Electronics

Volumn 42, Issue 3, 1998, Pages 447-451

  Takamiya, Saburo ^a   Harayama, Masaya ^a   Sugimura, Tomoyuki ^a   Tsuzuku, Tatsutoshi ^a   Taya, Takanobu ^a   Iiyama, Kouichi ^a   Hashimoto, Shoushin ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; ELECTRON TUNNELING; HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

REVERSE GATE CURRENTS; SCHOTTKY GATES;

GATES (TRANSISTOR);

EID: 0032017405     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00264-5     Document Type: Article

References (5)

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2. Bahl, S. R., del Alamo, J. A., Dickmann, J. and Schildberg, S., Off-state breakdown in InAlAs/ InGaAs MODFET's, IEEE Trans. E.D., 1995, 42(1), 15.
3. Putnum, C. S., Somerville, M. H., del Alamo, J. A., Chao, P. C. and Duh, K. G., Proc. of Int. Conf. on InP and Related Materials, 1997, pp. 197-200.
4. Takamiya, S., Sonoda, T., Yamanouchi, M., Fujioka, T. and Kohno, M., Source-drain burnout mechanism of power MESFETs: Three terminal effects, Solid-State Electronics, 1997, 41(3), 391-399.
5. Suzuki, S. Doumae Y. and Hasegawa, H. Fabrication and characterization of insulated gate InGaAs HEMT using Si interface control layer, Technical Report of IEICE, ED-95, x995-10, pp. 21-28.