GaAs PHEMT with 1.6 W/mm output power density

Electronics Letters

Volumn 35, Issue 9, 1999, Pages 748-749

  Marsetz, W ^a   Hulsmann A ^a   Kohler K ^a   Demmler, M ^a   Schlechtweg, M ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS (PHEMT);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032629283     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990474     Document Type: Article

References (6)

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2. JAU-WEN CHEN, THURAIRAJ, M., and DAS, M.B.: 'Optimization of gate-to-drain separation in submicron gate-length modulation doped FET's for maximum power gain performance', IEEE Trans., 1994, ED-41, (4), pp. 465-475
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6. KOETHER, D., and SPORKMANN, TH.: 'Power pull: An unconditionally stable active load-pull measurement'. GAAS'98, Amsterdam, NL, 5-7 October 1998, pp. 252-257