High-electric-field effects and degradation of AlGaAs/GaAs power HFETs: A numerical study

Microelectronics Reliability

Volumn 42, Issue 1, 2002, Pages 53-59

  Sozzi, Giovanna ^a   Menozzi, Roberto ^a  

^a UNIVERSITY OF PARMA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; HETEROJUNCTIONS; HOT CARRIERS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON CAPTURE;

FIELD EFFECT TRANSISTORS;

EID: 0036133335     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00240-2     Document Type: Article

References (16)

1. Volume and quality impacts on reliability: A new game for GaAs
2. Reliability physics of compound semiconductor transistors for microwave applications
3. Rapid degradation of WSi self-aligned gate GaAs MESFET by hot carrier effect
4. High reliability power GaAs MESFET under RF overdrive condition
5. Gradual degradation under RF overdrive of power GaAs field-effect transistors
6. Field dependent failure mechanisms in AlGaAs/GaAs HEMTs
7. Hot-electron-induced degradation of pseudomorphic high-electron mobility transistors
8. On the effects of hot electrons on the dc and rf characteristics of lattice-matched InAlAs/InGaAs/InP HEMT's
9. Drain resistance degradation under high fields in AlInAs/GaInAs MODFETs
10. 0.75As/GaAs power HFET's under off-state and on-state electrical stress conditions
11. Breakdown and degradation issues and the choice of a safe load line for power HFET operation
12. Breakdown walkout in pseudomorphic HEMT's
13. Looking for an acceleration law for the high-field degradation of AlGaAs/GaAs power HFETs: Can MOSFETs help?
14. On the correlation between drain-gate breakdown voltage and hot-electron reliability in InP HEMT's