Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs

Electronics Letters

Volumn 32, Issue 8, 1996, Pages 770-772

  Cameron, N I ^a   Murad, S ^a   McLelland, H ^a   Asenov, A ^a   Taylor, M R S ^a   Holland, M C ^a   Beaumont, S P ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

High electron mobility transistors; Semiconductor devices

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; ELECTRIC BREAKDOWN; ELECTRON BEAM LITHOGRAPHY; GATES (TRANSISTOR); REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES; TRANSCONDUCTANCE;

GATE INDUCTANCE; SATURATED DRAIN CURRENT DENSITY; THRESHOLD VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030125723     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960489     Document Type: Article

References (9)

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