An updated temperature-dependent breakdown coupling model including both impact ionization and tunneling mechanisms for AlGaAs/InGaAs HEMTs

IEEE Transactions on Electron Devices

Volumn 49, Issue 9, 2002, Pages 1675-

  Li, H Philip ^a   Hartin, Olin L ^a   Ray, Marcus ^a  

^a MOTOROLA INC   (United States)

Author keywords

Breakdown; Impact ionization; Thermionic field emission tunneling

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRON TUNNELING; IMPACT IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; THERMAL EFFECTS; THERMIONIC EMISSION; TWO DIMENSIONAL;

ALUMINUM GALLIUM ARSENIDE; REVERSE GATE CURRENT; THERMIONIC FIELD EMISSION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036713970     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.802651     Document Type: Article

References (25)

1. Depletion- and enhancement-mode A10.48In0.52As/Ga0.47In0.53As modulation-doped field-effect transistors with a recessed gate structure
2. 1-xAs power HEMT breakdown voltage on Schottky layer design and device layout
3. MOCVD grown AlInAs/GaInAs HEMTs with AlGaInP Schottky layer
4. High power and high efficiency AlInAs/GaInAs on InP HEMTs
5. InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process
6. 0.47As/InP high electron mobility transistors
7. 4 passivated InAlAs/InGaAs/InP HFETs
8. High-breakdown, high-gain InAlAs/InGaAsP quantum-well HEMTs
9. An AlGaAs/InGaAs PHEMT with improved breakdown voltage for X- and Ku-band power applications
10. Double recessed AlInAs/GaInAs/InP HEMTs with high breakdown voltages
11. Breakdown voltage enhancement from channel quantization in InAlAs/n+-InGaAs HFETs
12. Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs
13. A model for tunneling-limited breakdown in high-power HEMTs
14. Reverse currents of Schottky gates of III-V MESFET/HEMTS: Field emission and tunnel currents
15. Temperature dependence of breakdown voltage in InAlAs/InGaAs HEMTs: Theory and experiments
16. Off-state breakdown in InAlAs/InGaAs MODFETs
17. +-InGaAs heterostructure field-effect transistors
18. Control of gate-drain avalanche in GaAs MESFETs
19. An analytic solution of the two-dimensional poisson equation and a model of gate current and breakdown voltage for reverse gate-drain bias in GaAs MESFETs
20. Power-limiting breakdown effects in GaAs MESFETs
21. ISE-DESSIS, "ISE Integrated Syst. Eng. AG," Zürich, Switzerland
22. Comparison of raised and Schottky source/drain MOSFETs using a novel tunneling contact model
23. 1-xAs
24. Analytic theory for current-voltage characteristics and field distribution of GaAs MESFETs