Mechanisms for output power expansion and degradation of PHEMT's during high-efficiency operation

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1608-1613

  Leoni III, Robert E ^a   Hwang, James C M ^b  

^a LEHIGH UNIVERSITY   (United States)

^b RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; HOT CARRIERS; INTEGRATED CIRCUIT TESTING; MESFET DEVICES; MICROWAVE AMPLIFIERS; PASSIVATION; POWER AMPLIFIERS; THRESHOLD VOLTAGE;

DIRECT CURRENT STRESS; DRAIN CURRENT; DRAIN RESISTANCE; MODFET;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033169542     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777147     Document Type: Article

References (14)

1. J. C. M. Hwang, "Gradual degradation under RF overdrive of MES- FET's and PHEMT's," in Dig. IEEE GaAs 1C Symp., 1995, pp. 81-84
2. Y. A. Tkachenko, C. J. Wei, J. C. M. Hwang, T. D. Harris, R. D. Grober, E. Aucoin, and S. Shanfield, "Hot-electron-induced electro- luminescence of GaAs field-effect and bipolar transistors," in Dig. IEEE Sarnoff Symp., 1994
3. C. Canali, P. Cova, E. De Bortoli, F. Fantini, G. Meneghesso, R. Menozzi, and E. Zanoni, "Enhancement and degradation of drain current in pseudomorphic AlGaAs/InGaAs HEMT's induced by hot-electrons," in Dig. Int. Reliab. Phys. Symp., 1995, pp. 205-211
4. Y. A. Tkachenko, C. J. Wei, and J. C. M. Hwang, "Hot-electron induced degradation of pseudomorphic high-electron mobility transistors," in Dig. IEEE Microwave Millimeter-Wave Monolithic Circuits Symp., 1995, pp. 115-118
5. G. Meneghesso, C. Canali, P. Cova, E. De Bortoli, and E. Zanoni, "Trapped charge modulation: A new cause of instability in Al- GaAs/InGaAs pseudomorphic HEMT's," IEEE Electron Device Lett., vol. 17, pp. 232-234, May 1996
6. J. E. Muraro, F. Coppel, and G. Gregoris, "Hot electron effect on HFET devices: How to assess reliability of high power amplifiers?," in Proc. GaAs Reliab. Workshop, 1996, pp. 16-17
7. R. E. Eeoni and J. C. M. Hwang, "Effects of reverse gate-drain breakdown on gradual degradation of power PHEMT's," in Dig. IEEE GaAs 1C Symp., 1996, pp. 31-33
8. G. Meneghesso, Y. Haddab, N. Perrino, C. Canali, and E. Zanoni, "Drain current DETS analysis of recoverable and permanent degradation effects in AlGaAs/GaAs and AlGaAs/InGaAs HEMT's," Microelectron. Reliab., vol. 36, no. 11/12, pp. 1895-1898, 1996
9. R. Menozzi, M. Borgarino, P. Cova, Y. Baeyens, M. Van Hove, and F. Fantini, "The effect of hot electron stress on the DC and microwave characteristics of GaAs-PHEMT's and InP-HEMT's," in Dig. Int. Reliab. Phys. Symp., 1997, pp. 242-247.
10. Y. Chou and G. Li, "Reliability and alleviation of premature on-state avalanche breakdown in deep submicron power PHEMT's," in Dig. Int. Reliab. Phys. Symp., 1997, pp. 261-267.
11. G. Meneghesso, E. De Bortoli, D. Sala, and E. Zanoni, "Failure mechanisms of AlGaAs/InGaAs pseudomorphic HEMT's: Effects due to hot electrons and modulation of trapped charge," Microelectron. Reliab., vol. 37, no. 7, pp. 1121-1129, 1997.
12. P. Cova, R. Menozzi, F. Fantini, M. Pavesi, and G. Meneghesso, "A study of hot-electron degradation effects in pseudomorphic HEMTS," Microelectron. Reliab., vol. 37, no. 7, pp. 1131-1135, 1997.
13. M. Borgarino, R. Menozzi, Y. Baeyens, P. Cova, and F. Fantini, "Hot electron degradation of the DC and RF characteristics of Al- GaAs/InGaAs/GaAs PHEMT's," IEEE Trans. Electron Devices, vol. 45, pp. 366-372, Feb. 1998.
14. W. E. Spicer, P. W. Chye, P. R. Skeath, C. Y. Su, and I. Lindau, "New and unified model for Schottky barrier and III-V interface state formation," J. Vac. Sci. Technol, vol. 16, pp. 1422-1433, 1979.