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Volumn 242, Issue 8, 2005, Pages 1617-1627

Interfacial steps, dislocations, and inversion domain boundaries in the GaN/AlN/Si (0001)/(111) epitaxial system

Author keywords

[No Author keywords available]

Indexed keywords


EID: 22144431827     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200440058     Document Type: Article
Times cited : (8)

References (45)
  • 9
    • 0003957801 scopus 로고    scopus 로고
    • edited by J. Pankove and T. Moustakas (Academic Press, New York)
    • S. P. Denbaars and S. Keller, in: Semiconductors and Semimetals, edited by J. Pankove and T. Moustakas (Academic Press, New York, 1998), Vol. 50, p. 11.
    • (1998) Semiconductors and Semimetals , vol.50 , pp. 11
    • Denbaars, S.P.1    Keller, S.2
  • 24
    • 0006012168 scopus 로고
    • edited by F. R. N. Nabarro North Roland, Amsterdam
    • R. C. Pond, in: Dislocations in Solids, edited by F. R. N. Nabarro (North Roland, Amsterdam, 1989), Vol. 8, p. 5.
    • (1989) Dislocations in Solids , vol.8 , pp. 5
    • Pond, R.C.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.