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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 24, 2001, Pages 2453251-24532512

Structural transition of inversion domain boundaries through interactions with stacking faults in epitaxial GaN

(8) Dimitrakopulos, G P a Komninou, Ph a Kioseoglou, J a Kehagias, Th a Sarigiannidou, E a Georgakilas, A b Nouet, G c Karakostas, Th a

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b INSTITUTE OF ELECTRONIC STRUCTURE AND LASER (Greece)

c LABORATOIRE CRISMAT (France)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM;

ARTICLE; CHEMICAL STRUCTURE; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ENERGY TRANSFER; GROWTH RATE; MOLECULAR INTERACTION; STRUCTURE ANALYSIS; TECHNIQUE;

EID: 0001095957 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.64.245325 Document Type: Article

Times cited : (32)

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