Atomic-scale models of interactions between inversion domain boundaries and intrinsic basal stacking faults in GaN

Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 905-909

  Kioseoglou, J ^a   Dimitrakopulos, G P ^a   Polatoglou, H M ^a   Lymperakis, L ^a,b   Nouet, G ^c   Komninou, Ph ^a  

^a ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c LABORATOIRE CRISMAT   (France)

Author keywords

Characterization; Gallium nitride (GaN); Modeling; Planar defects

Indexed keywords

GROWTH (MATERIALS); HIGH RESOLUTION ELECTRON MICROSCOPY; INVERSE KINEMATICS; SAPPHIRE; STACKING FAULTS;

ATOMIC-SCALE MODELS;

GALLIUM NITRIDE;

GALLIUM;

EID: 0036508135     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00017-1     Document Type: Article

References (15)