Microstructure of GaN films grown on Si(1 1 1) substrates by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 256, Issue 3-4, 2003, Pages 416-423

  Hu, G Q ^a   Kong, X ^a   Wan, L ^a   Wang, Y Q ^a   Duan, X F ^a   Lu, Y ^b   Liu, X L ^b  

^a INSTITUTE OF PHYSICS   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Amorphous layer; A1. Dislocation; A1. Transmission electron microscopy; A3. Metalorganic chemical vapor deposition; B1. GaN

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISLOCATIONS (CRYSTALS); GALLIUM NITRIDE; GRAIN BOUNDARIES; INTERFACES (MATERIALS); MICROSTRUCTURE; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS LAYERS;

THIN FILMS;

EID: 0041669343     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01368-X     Document Type: Article

References (21)

1. Nakamura S., Mukai T., Senoh M. Appl. Phys. Lett. 64:1994;1687.
2. Osinsky A., Gangopadhyay S., Yang J.W., Gaska R., Kuksenkov H., Temkin I.K., Shimagin Y.C., Chang J.F., Muth R.M., Kolbas Appl. Phys. Lett. 72:1998;551.
3. Sheppard S.T., Doverspike K., Prible W.L., Allen S.T., Palmour J.W., Kehias L.T., Jenkins T.J. IEEE Electron Device Lett. 20:1999;161.
4. Ponce F.A., Cherns D., Young W.T., Steeds J.W. Appl. Phys. Lett. 69:1996;770.
5. Kazuo Nakajima, Toru Ujihara, Satoru Miyashita, Gen Sazaki, J. Appl. Phys. 89 (2001) 148.
6. Potin V., Ruterana P., Nouet G., Pond R.C., Morkoc H. Phys. Rev. B. 61:2000;5587.
7. Wu X.H., Brown L.M., Kapolnek D., Keller S., Keller B., DenBaars S.P., Speck J.S. J. Appl. Phys. 80:1996;3228.
8. Schremer A.T., Smart J.A., Wang Y., Ambacher O., MacDonald N.C., Shealy J.R. Appl. Phys. Lett. 76:2000;736.
9. Lianshan Wang, Xianglin Liu, Yude Zan, Jun Wang, Du Wang, Da-cheng Lu, Zhanguo Wang, Appl. Phys. Lett. 72 (1998) 109.
10. Min-Ho Kim, Young-Churl Bang, Nae-Man Park, Chel-Jong Choi, Tae-Yeon Seong, Seong-Ju Park, Appl. Phys. Lett. 78 (2001) 2858.
11. Yoshinobu Nakada, Igor Aksenov, Hajime Okumura, Appl. Phys. Lett. 73 (1998) 827.
12. Shigeyasu Tanaka, Yasutoshi Kawaguchi, Nobuhiko Sawaki, Michio Hibino, Kazumasa Hiramatsu, Appl. Phys. Lett. 76 (2000) 2701.
13. Wang D., Hiroyama Y., Tamura M., Ichikawa M., Yoshida S. Appl. Phys. Lett. 76:2000;1683.
14. People R., Bean J.C. Appl. Phys. Lett. 47:1985;322.
15. Eric Feltin B., Beaumont M., Laügt P., de Mierry P., Vennéguès H., Lahrèche M., Leroux P., Gibart Appl. Phys. Lett. 79:2001;3230.
16. Nikishin S.A., Faleev N.N., Antipov V.G., Francoeur S., Grave de Peralta L., Seryogin G.A., Temkin H., Prokofyeva T.I., Holtz M., Chu S.N.G. Appl. Phys. Lett. 75:1998;2073.
17. M. Hao, S.J. Chua, J. Zhang, E.K. Sia, J. Crystal Growth, in press.
18. Kim Y.-W., Suh E.-K., Lee H.J. Appl. Phys. Lett. 80:2002;3349.
19. Vézian S., Massies J., Semond F., Grandjean N., Vennéguès P. Phys. Rev. B. 61:2000;7618.
20. Serneels R., Snykers M., Delavignette P., Gevers R., Amelinckx S. Phys. Stat. Sol. 58:1993;277.
21. Sánchez A.M., Pacheco F.J., Molina S.I., Garcia R., Ruterana P., Sánchez-García M.A., Calleja E. Appl. Phys. Lett. 78:2001;2688.