Mechanism for pinhole formation in GaN/AIN/Si(111) layers from steps at the substrate surface

Applied Physics Letters

Volumn 86, Issue 1, 2005, Pages

  Sanchez, A M ^a,b   Dimitrakopulos, G P ^a,c   Ruterana, P ^a  

^a UNIVERSITÉ DE CAEN   (France)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; COALESCENCE; MOLECULAR BEAM EPITAXY; SUBSTRATES; TOPOLOGY; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYERS; HEXAGONAL SYMMETRY; NONZERO DISPLACEMENT; PINHOLE FORMATION;

GALLIUM NITRIDE;

EID: 19744383075     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1845599     Document Type: Article

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