Temperature dependence of forward current characteristics of GaN junction and Schottky rectifiers

Solid-State Electronics

Volumn 47, Issue 9, 2003, Pages 1533-1538

  Baik, K H ^a   Irokawa, Y ^b   Ren, F ^a   Pearton, S J ^a   Park, S S ^c   Park, Y J ^c  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b Rd Management Section   (Japan)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; IONIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SOLID STATE RECTIFIERS; THERMAL EFFECTS;

SCHOTTKY RECTIFIERS;

GALLIUM NITRIDE;

EID: 0038746820     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00071-6     Document Type: Article

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