Reliable Ti/Al and Ti/Al/Ni/Au ohmic contacts to n-type GaN formed by vacuum annealing

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 261-267

  Papanicolaou, N A ^a   Rao, M V ^b   Mittereder, J ^a   Anderson, W T ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b George Mason University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY; INTERMETALLICS; METALLIZING; RAPID THERMAL ANNEALING; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ROUGHNESS; THERMAL EFFECTS; VACUUM APPLICATIONS;

COMPOSITIONAL DEPTH PROFILES; CONTACT RESISTIVITY; VACUUM ANNEALING;

OHMIC CONTACTS;

EID: 0035087099     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1331291     Document Type: Article

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