Thermally stable ultra-thin nitrogen incorporated ZrO2 gate dielectric prepared by low temperature oxidation of ZrN

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2001, Pages 459-462

  Koyama, M ^a   Suguro, K ^a   Yoshiki, M ^a   Kamimuta, Y ^a   Koike, M ^a   Ohse, M ^a   Hongo, C ^a   Nishiyama, A ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ANNEALING; BORON; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; LOW TEMPERATURE EFFECTS; OXIDATION; POLYSILICON; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; THICKNESS MEASUREMENT; ZIRCONIUM COMPOUNDS;

CAPACITANCE EQUIVALENT THICKNESS; ULTRATHIN NITROGEN INCORPORATED ZIRCONIA; ZIRCONIUM NITRIDE;

ULTRATHIN FILMS;

EID: 0035716242     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)