Low-temperature deposition of high-quality silicon dioxide films by sputtering-type electron cyclotron resonance plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 4, 1997, Pages 1951-1954

  Nakashima, H ^a   Furukawa, K ^a   Liu, Y C ^a   Gao, D W ^a   Kashiwazaki, Y ^a   Muraoka, K ^a   Shibata, K ^a   Tsurushima, T ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0031482158     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580664     Document Type: Article

References (10)

1. M. Kitagawa, T. Hirao, T. Ohmura, and T. Izumi, Jpn. J. Appl. Phys. 1 28, L1048 (1989).
2. C. Charles, G. G. Matlakowski, R. W. Boswell, A. Goullet, G. Turban, and C. Cardinaud, J. Vac. Sci. Technol. A 11, 2954 (1993).
3. T. V. Herak, T. T. Chau, D. J. Thomson, S. R. Mejia, D. A. Buchanan, and K. C. Kao, J. Appl. Phys. 65, 2457 (1989).
4. J. Batey and E. Tierney, J. Appl. Phys. 60, 3136 (1986).
5. T. Ono, C. Takahashi, and S. Matsuo, Jpn. J. Appl. Phys. 1 23, L534 (1984).
6. M. Matsuoka and K. Ono, J. Appl. Phys. 64, 5179 (1988).
7. T. Ono, H. Nishimura, M. Shimada, and S. Matsuo, J. Vac. Sci. Technol. A 12, 1281 (1994).
8. Y. Kawai, N. Konishi, J. Watanabe, and T. Ohmi, Appl. Phys. Lett. 64, 2223 (1994).
9. P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovsky, J. Vac. Sci. Technol. A 4, 689 (1986).
10. G. Lucovsky, M. J. Manitini, J. K. Srivastava, and E. A. Irene, J. Vac. Sci. Technol. B 5, 530 (1987).