Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma

Journal of Applied Physics

Volumn 82, Issue 11, 1997, Pages 5680-5685

  Gao, D W ^a   Kashiwazaki, Y ^a   Muraoka, K ^a   Nakashima, H ^a   Furukawa, K ^a   Liu, Y C ^a   Shibata, K ^a   Tsurushima, T ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0012119125     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366431     Document Type: Article

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