Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation

Solid-State Electronics

Volumn 48, Issue 6, 2004, Pages 1045-1054

  Simoen, E ^a   Rafi J M ^a   Mercha, A ^a   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Low frequency noise; Radiation damage; Silicon on insulator MOSFETs; Total ionizing dose

Indexed keywords

ANNEALING; HOLE TRAPS; IONIZING RADIATION; LEAKAGE CURRENTS; MOSFET DEVICES; POLYSILICON; PROTON IRRADIATION; RADIATION DAMAGE; THICKNESS MEASUREMENT; TRANSISTORS;

LOW FREQUENCY NOISE; SILICON-ON-INSULATORS MOSFETS; TOTAL IONIZING DOSE (TID);

SILICON ON INSULATOR TECHNOLOGY;

EID: 1442360750     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.12.021     Document Type: Article

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