Radiation effects in SOI technologies

IEEE Transactions on Nuclear Science

Volumn 50 III, Issue 3, 2003, Pages 522-538

  Schwank, J R ^a   Ferlet Cavrois, V ^b   Shaneyfelt, M R ^a   Paillet, P ^b   Dodd, P E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b CEA DIF   (France)

Author keywords

Dose rate effects; Radiation effects; Silicon on insulator (SOI); Single event effects; Total dose effects

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENT MEASUREMENT; LEAKAGE CURRENTS; RADIATION HARDENING; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

BULK SILICON DEVICE; DOSE RATE EFFECTS; RADIATION INDUCED TRAPPED CHARGE; SINGLE EVENT UPSET; SINGLE TRANSISTOR LATCH; TOTAL DOSE EFFECTS;

RADIATION EFFECTS;

EID: 0038454484     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.812930     Document Type: Article

References (93)

1. J. E. Lilienfeld, "Method and Apparatus for Controlling Electric Currents (Filed in 1926, Issued in 1930), "Device for Controlling Electric Current" (Filed in 1928, Issued in 1933), "Amplifier for Electric Current" (Filed in 1928, Issued in 1932)," U.S. Patents 1 745 175, 1 900 018, 1 877 140.
2. D. Kahng, "A historical perspective on the development of MOS transistors and related devices," IEEE Trans. Electron. Devices, vol. 23, pp. 655-657, July 1976.
3. J. P. Colinge, Silicon on Insulator: Materials to VLSI. New York: Kluwer, 1991.
4. S. Cristoloveanu and S. S. Li, Electrical Characterization of Silicon-On-Insulator Materials and Devices. New York: Kluwer, 1995.
5. A. J. Auberton-Hervé, "SOI: Materials to systems," in IEDM Tech. Dig., 1996, p. 3.
6. 2 films by oxygen-ion bombardment," Jpn. J. Appl. Phys., vol. 5, p. 737, 1966.
7. J. Margail, J. Stoemenos, C. Jaussaud, M. Dupuy, P. Martin, B. Blanchard, and M. Bruel, "Structural characterization of SIMOX structures," in Energy Beam Solid Interactions and Transient Thermal Processing, V. T. Nguyen and A. G. Cullis, Eds. Les Ulis, France: Les Editions de Physique, 1986, p. 519.
8. B. Aspar, C. Pudda, A. M. Papon, A. J. Auberton-Hervé, and J. M. Lamure, "Ultra-thin buried oxide layers formed by low dose SIMOX processes," in Electrochem. Soc. SOI Symp. Pro7-1827, Dec. 1994.
9. M. Bruel, "Silicon-on-insulator material technology," Electron. Lett., vol. 31, no. 14, pp. 1201-1202, July 1995.
10. A. J. Auberton-Hervé and M. B. Semicon, West Technical Program SOI Symp. Proc., 1995, p. 117.
11. H. M. Manasevit and W. I. Simpson, "Single-crystal silicon on a sapphire substrate," J. Appl. Phys., vol. 35, p., 1964.
12. F. P. Heiman, "Thin film silicon on sapphire deep depletion MOS transistor," IEEE Trans. Electron. Devices, vol. 13, p. 855, Dec. 1966.
13. T. Sato, J. Iwamura, H. Tango, and K. Doi, "CMOS/SOS VLSI technology," in Material Research Society Proceedings, vol. 33, H. W. Lam and M. J. Thompson, Eds., Amsterdam, The Netherlands, 1984, p. 3.
14. J. E. A. Maurits, "SOS wafers-Some comparison to silicon wafers," IEEE Trans. Electron. Devices, vol. 25, pp. 859-863, Aug. 1978.
15. "An ultra-thin silicon technology that provides integration solutions on standard CMOS," Microwave J., p. 198, Jan. 1998.
16. H. C. Tuan, Material Research Society Proceedings, vol. 33, H. W. Lam and M. J. Thompson, Eds., Amsterdam, The Netherlands, 1984, pp. 247-257.
17. B. Y. Tsaur, "Zone-melting-recrystallization silicon-on-insulator technology," IEEE Circuits Devices Mag., vol. 3, pp. 12-16, 1987.
18. M. Haond, D. P. Vu, A. M. Aguirre, and S. Perret, "Electrical performances of devices made on SOI films obtained by lamp ZMR," IEEE Circuits Devices Mag., vol. 3, pp. 27-31, Dec. 1987.
19. I. Golecki, Material Research Society Proceedings, vol. 33, H. W. Lam and M. J. Thompson, Eds., Amsterdam, The Netherlands, 1984, p. 3.
20. 2 by CVD: Epitaxial lateral overgrowth technique," J. Electrochem. Soc., vol. 130, no. 7, pp. 1571-1580, 1983.
21. R. P. Zingg, B. Höfflinger, and G. W. Neudeck, IEDM Tech. Dig., 1989, p. 109.
22. K. Imai, "A new dielectric isolation method using porous silicon," Solid-State Electron., vol. 24, no. 2, p. 159, 1981.
23. S. S. Tsao, "Porous silicon techniques for SOI structures," IEEE Circuits Devices Mag., vol. 3, no. 6, pp. 3-7, 1987.
24. G. Bomchil, A. Halimaoui, and R. Herino, "Porous silicon: The material and its applications in silicon-on-insulator technologies," Appl. Surface Sci., vol. 41/42, pp. 604-613, 1989.
25. H. K. Lim and J. G. Fossum, "Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET's," IEEE Trans. Electron. Devices, vol. 30, pp. 1244-1251, Oct. 1983.
26. O. Musseau, J. L. Leray, V. Ferlet-Cavrois, Y. M. Coic, and B. Giffard, "SEU in SOI SRAMs-A static model," IEEE Trans. Nucl. Sci., vol. 41, pp. 607-612, June 1994.
27. M. L. Alles, "SPICE analysis of the SEU sensitivity of a fully depleted SOI CMOS SRAM cell," IEEE Trans. Nucl. Sci., vol. 41, pp. 2093-2097, Dec. 1994.
28. J. L. Leray, E. Dupont-Nivet, O. Musseau, Y. M. Coic, A. Umbert, P. Lalande, J. F. Pere, A. J. Auberton-Herve, M. Bruel, C. Jaussaud, J. Margail, B. Giffard, R. Truche, and F. Martin, "From substrate to VLSI: Investigation of hardened SIMOX without epitaxy for dose, dose rate and SEU phenomena," IEEE Trans. Nucl. Sci., vol. 35, pp. 1355-1360, Dec. 1988.
29. M. L. Alles, S. E. Kerns, L. W. Massengill, J. E. Clark, K. L. Jones Jr., and R. E. Lowther, "Body tie placement in CMOS/SOI digital circuits for transient radiation environments," IEEE Trans. Nucl. Sci., vol. 38, pp. 1259-1264, Dec. 1991.
30. R. E. Mikawa and M. R. Ackermann, "Transient radiation effects in SOI static RAM cells," IEEE Trans. Nucl. Sci., vol. 34, pp. 1698-1703, Dec. 1987.
31. M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation," IEEE Trans. Nucl. Sci., vol. 45, pp. 2584-2592, Dec. 1998.
32. H. E. Boesch Jr. and T. L. Taylor, "Time-dependent radiation-induced charge effects in wafer-bonded SOI buried oxides," IEEE Trans. Nucl. Sci., vol. 39, pp. 2103-2113, Dec. 1992.
33. H. E. Boesch Jr., T. L. Taylor, L. R. Hite, and W. E. Bailey, "Time-dependent hole and electron trapping effects in SIMOX buried oxides," IEEE Trans. Nucl. Sci., vol. 37, pp. 1982-1989, Dec. 1990.
34. W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. S. Winokur, and R. A. B. Devine, "Microscopic nature of border traps in MOS devices," IEEE Trans. Nucl. Sci., vol. 41, pp. 1817-1827, Dec. 1994.
35. 2/Si structures," J. Appl. Phys., vol. 77, no. 1, pp. 175-186, Jan. 1995.
36. 2 layers," J. Appl. Phys., vol. 51, no. 2, pp. 1085-1101, Feb. 1980.
37. 2 by phosphorus ion penetration of polycrystalline silicon," IEEE Trans. Nucl. Sci., vol. 26, pp. 1467-1470, Dec. 1982.
38. W. L. Warren, M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, R. A. B. Devine, W. P. Maszara, and J. B. McKitterick, "Paramagnetic defect centers in BESOI and SIMOX buried oxides," IEEE Trans. Nucl. Sci., vol. 40, pp. 1755-1764, Dec. 1993.
39. J. F. Conley, P. M. Lenahan, and P. Roitman, "Electron spin resonance study of E' trapping centers in SIMOX buried oxides," IEEE Trans. Nucl. Sci., vol. 38, pp. 1247-1252, Dec. 1991.
40. 2 layers," J. Appl. Phys., vol. 72, no. 8, pp. 3634-3640, Oct. 1992.
41. M. E. Zvanut, R. E. Stahlbush, W. E. Carlos, H. L. Hughes, R. K. Lawrence, R. Hevey, and G. A. Brown, "SIMOX with epitaxial silicon: Point defects and positive charge," IEEE Trans. Nucl. Sci., vol. 38, pp. 1253-1258, Dec. 1991.
42. 2 layers," Appl. Phys. Lett., vol. 59, no. 18, pp. 2275-2277, Oct. 1991.
43. J. F. Conley, P. M. Lenahan, and P. M. Roitman, "Electron spin resonance of SIMOX oxides: Evidence for structural change and a deep electron trap," Appl. Phys. Lett., vol. 60, no. 23, pp. 2889-2891, June 1992.
44. 2," in Material Res. Soc. Symp. Proc., vol. 284, 1993, pp. 299-299.
45. A. Stesmans, R. A. B. Devine, A. G. Revesz, and H. L. Hughes, "Irradiation-induced EPR active defects in SIMOX structures," IEEE Trans. Nucl. Sci., vol. 37, pp. 2008-2012, Dec. 1990.
46. J. F. Conley, P. M. Lenahan, and P. Roitman, "Evidence for a deep electron trap and charge compensation in separation by implanted oxygen oxides," IEEE Trans. Nucl. Sci., vol. 39, pp. 2114-2120, Dec. 1992.
47. 2 thin films," Appl. Phys. Lett., vol. 62, no. 25, pp. 3330-3332, June 19993.
48. C. A. Pennise and H. E. Boesch Jr., "Determination of the charge-trapping characteristics of buried oxides using a 10-keV X-ray source," IEEE Trans. Nucl. Sci., vol. 37, pp. 1990-1994, Dec. 1990.
49. H. E. Boesch Jr., T. L. Taylor, and G. A. Brown, "Charge buildup at high dose and low fields in SIMOX buried oxides," IEEE Trans. Nucl. Sci., vol. 38, pp. 1234-1239, Dec. 1991.
50. C. A. Pennise and H. E. Boesch Jr., "Thermal annealing of trapped holes in SIMOX buried oxides," IEEE Trans. Nucl. Sci., vol. 38, pp. 1240-1246, Dec. 1991.
51. R. E. Stahlbush, G. J. Campisi, J. B. McKitterick, W. P. Maszara, P. Roitman, and G. A. Brown, "Electron and hole trapping in irradiated SIMOX, ZMR, and BESOI buried oxides," IEEE Trans. Nucl. Sci., vol. 39, pp. 2086-2097, Dec. 1992.
52. P. Paillet, D. Hervé, J. L. Leray, and R. A. B. Devine, "Evidence of negative charge trapping in high temperature annealed thermal oxide," IEEE Trans. Nucl. Sci., vol. 41, pp. 43-2113, Dec. 1992.
53. J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, V. Ferlet-Cavrois, R. A. Loemker, P. S. Winokur, D. M. Fleetwood, P. Paillet, J.-L. Leray, B. L. Draper, S. C. Witczak, and L. C. Riewe, "Correlation between Co-60 and x-ray radiation-induced charge buildup in silicon-on-insulator buried oxides," IEEE Trans. Nucl. Sci., vol. 47, pp. 2175-2182, Dec. 2000.
54. P. Paillet, J.-. L. Autran, J.-. L. Leray, B. Aspar, and A. J. Auberton-Hervé, "Trapping-detrapping properties of irradiated ultra-thin SIMOX buried oxides," IEEE Trans. Nucl. Sci., vol. 42, pp. 2108-2113, Dec. 1995.
55. V. Ferlet-Cavrois, G. Gasiot, C. Marcandella, C. D'hose, O. Flament, O. Faynot, J. d. P. d. Pontcharra, and C. Raynaud, "Insights on the transient response of full and partially depleted SOI technologies under heavy ion and dose rate irradiations," IEEE Trans. Nucl. Sci., vol. 49, pp. 2948-2956, Dec. 2002.
56. S. T. Liu, S. Balster, S. Sinha, and W. C. Jenkins, "Worst case total dose radiation response of 0.35 μm SOI CMOS FET's," IEEE Trans. Nucl. Sci., vol. 46, pp. 1817-1823, Dec. 1999.
57. V. Ferlet-Cavrois, T. Colladant, P. Paillet, J. L. Leray, O. Musseau, J. R. Schwank, M. R. Shaneyfelt, J. L. Pelloie, and J. du Port de Poncharra, "Worst-case bias during total dose irradiation of SOI transistors," IEEE Trans. Nucl. Sci., vol. 47, pp. 2183-2188, Dec. 2000.
58. W. C. Jenkins and S. T. Liu, "Radiation response of fully-depleted MOS transistors fabricated in SIMOX," IEEE Trans. Nucl. Sci., vol. 41, pp. 2317-2321, Dec. 1994.
59. J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, J. A. Burns, C. L. Keast, and P. W. Wyatt, "New insights into fully-depleted SOI transistor response after total-dose irradiation," IEEE Trans. Nucl. Sci., vol. 47, pp. 604-612, June 2000.
60. F. T. Brady, H. L. Hughes, P. J. McMarr, and B. Mrstik, "Total dose hardening of SIMOX buried oxides for fully-depleted devices in rad-tolerant applications," IEEE Trans. Nucl. Sci., vol. 43, pp. 2646-2650, Dec. 1996.
61. F. T. Brady, R. Brown, L. Rockett, and J. Vasquez, "Development of a radiation tolerant 1 M SRAM on fully-depleted SOI," IEEE Trans. Nucl. Sci., vol. 45, pp. 2436-2441, Dec. 1998.
62. V. Ferlet-Cavrois, S. Quoizola, O. Musseau, O. Flament, and J. L. Leray, "Total dose latch in short channel NMOS/SOI transistors," IEEE Trans. Nucl. Sci., vol. 45, pp. 2458-2466, Dec. 1998.
63. H. Hughes and P. McMarr, "Radiation-Hardening of SOI by ion implantation into the buried oxide," U.S. Patent no. 5 795 813.
64. B. J. Mrstik, H. L. Hughes, P. J. McMarr, R. K. Lawrence, D. I. Ma, I. P. Isaacson, and R. A. Walker, "Hole and electron trapping in ion implanted thermal oxides and SIMOX," IEEE Trans. Nucl. Sci., vol. 47, pp. 2189-2195, Dec. 2000.
65. R. J. Lambert, T. N. Bhar, and H. L. Hughes, "Effect of an augmented oxygen implant on electron trapping in buried oxides," Appl. Phys. Lett., vol. 64, no. 24, pp. 3201-3202, June 1994.
66. R. E. Stahlbush, H. L. Hughes, and W. A. Krull, "Reduction of charge trapping and electron tunneling in SIMOX by supplemental implantation of oxygen," IEEE Trans. Nucl. Sci., vol. 40, pp. 1740-1747, Dec. 1993.
67. H. E. Boesch Jr., T. L. Taylor, and W. A. Krull, "Charge trapping and transport properties of SIMOX buried oxides with supplemental oxygen implantation," IEEE Trans. Nucl. Sci., vol. 40, pp. 1748-1754, Dec. 1993.
68. P. Paillet, J. L. Autran, O. Flament, J. L. Leray, B. Aspar, and A. J. Auberton-Hervé, "X-radiation response of SIMOX buried oxides: Influence of the fabrication process," IEEE Trans. Nucl. Sci., vol. 43, pp. 821-825, June 1996.
69. O. Flament, P. Paillet, and J. L. Leray, "Effect of supplemental dose in SIMOX on very high ionizing dose response," in Proc. Sixth Int. Symp. SOI Technology Devices, S. Cristoloveanu, Ed., 1994, P-V 94-1, p. 381.
70. S. Cristoloveanu, D. E. Ioannou, R. K. Lawrence, G. J. Campisi, and H. L. Hughes, "Asymmetrical irradiation effects in SIMOX MOSFET's," in RADECS, Proc., Saint-Malo, France, Sept. 13-16, 1993, pp. 373-377.
71. B.-Y. Mao, C.-E. Chen, G. Pollack, H. L. Hughes, and G. E. Davis, "Total dose hardening of buried insulator in implanted silicon-on-insulator structures," IEEE Trans. Nucl. Sci., vol. 34, pp. 1692-1697, Dec. 1987.
72. J. R. Schwank, M. R. Shaneyfelt, B. L. Draper, and P. E. Dodd, "BUSFET-A radiation-hardened SOI transistor," IEEE Trans. Nucl. Sci., vol. 46, no. 6, pp. 1809-1816, Dec. 1999.
73. G. E. Davis, L. R. Hite, T. G. W. Blake, C.-E. Chen, H. W. Lam, and R. DeMoyer Jr, "Transient radiation effects in SOI memories," IEEE Trans. Nucl. Sci., vol. 32, no. 6, pp. 4432-4437, Dec. 1985.
74. L. W. Massengill, D. V. Kerns Jr, S. E. Kerns, M. L. Alles, "Single-event charge enhancement in SOI devices," IEEE Electron Dev. Lett., vol. 11, no. 2, pp. 98-99, Feb. 1990.
75. C. Brisset, P. Dollfus, O. Musseau, J. Leray, and P. Hesto, "Theoretical study of SEUS in 0.25-μm fully-depleted CMOS/SOI technology," IEEE Trans. Nucl. Sci., vol. 41, pp. 2293-2113, Dec. 1992.
76. H. Iwata and T. Ohzone, "Numerical analysis of alpha-particle-induced soft errors in SOI MOS devices," IEEE Trans. Electron. Devices, vol. 39, pp. 1184-1190, May 1992.
77. L. R. Hite, H. Lu, T. W. Houston, D. S. Hurta, and W. E. Bailey, "An SEU resistant 256 K SOI SRAM," IEEE Trans. Nucl. Sci., vol. 39, pp. 2121-2125, Dec. 1992.
78. S. E. Kerns, L. W. Massengill, D. V. Kerns Jr, J. M. L. Alles, T. W. Houston, H. Lu, and L. R. Hite, "Model for CMOS/SOI single-event vulnerability," IEEE Trans. Nucl. Sci., vol. 36, pp. 2305-2310, Dec. 1989.
79. O. Musseau, V. Ferlet-Cavrois, J. L. Pelloie, S. Buchner, D. McMorrow, and A. B. Campbell, "Laser probing of bipolar amplification in 0.25-μm MOS/SOI transistors," IEEE Trans. Nucl. Sci., vol. 47, pp. 2196-2203, Dec. 2000.
80. K. Hirose, H. S. M. Akiyama, M. Arakaki, Y. Kuroda, S. Ishii, and K. Nakano, "Total-dose and single-event upset (SEU) resistance in advanced SRAM's fabricated on SOI using 0.2 μm design rules," in 2001 IEEE Radiation Effects Data Workshop Rec., Vancouver, BC, Canada, July 2001, pp. 48-50.
81. F. W. Sexton, "Measurement of single event phenomena in devices and IC's," in 1992 IEEE Nuclear Space Radiation Effects Conf. Short Course, New Orleans, LA, pp. III-1-III-55.
82. D. Binder, E. C. Smith, and A. B. Holman, "Satellite anomalies from galactic cosmic rays," IEEE Trans. Nucl. Sci., vol. 22, pp. 2675-2680, Dec. 1975.
83. P. E. Dodd, M. R. Shaneyfelt, J. R. Schwank, G. L. Hash, B. L. Draper, and P. S. Winokur, "Single-event upset and snapback in silicon-on-insulator devices," IEEE Trans. Nucl. Sci., vol. 47, pp. 2165-2174, Dec. 2000.
84. P. E. Dodd, M. R. Shaneyfelt, K. M. Horn, D. S. Walsh, G. L. Hash, T. A. Hill, B. L. Draper, J. R. Schwank, F. W. Sexton, and P. S. Winokur, "SEU-sensitive volumes in bulk and SOI SRAM's from first-principles calculations and experiments," IEEE Trans. Nucl. Sci., vol. 48, pp. 1893-1903, Dec. 2001.
85. J. R. Schwank, P. E. Dodd, M. R. Shaneyfelt, G. Vizkelethy, B. L. Draper, T. A. Hill, D. S. Walsh, and G. L. Hash, "Anomalous charge collection from SOI circuits and its effect on SEU hardness," IEEE Trans. Nucl. Sci., vol. 49, pp. 2937-2947, Dec. 2002.
86. A. B. Campbell and A. R. Knudson, "Charge collection measurements for energetic ions in silicon," IEEE Trans. Nucl. Sci., vol. 29, pp. 2067-2071, Dec. 1982.
87. M. A. Xapsos, A. B. Campbell, A. R. Knudson, W. J. Stapor, P. Shapiro, T. Palmer, T. McDonald, and S. L. Swickert, "Charge collection efficiency related to damage in MOS capacitors," IEEE Trans. Nucl. Sci., vol. 34, pp. 1214-1219, Dec. 1987.
88. O. Musseau, J. L. Leray, V. Ferlet, A. Umbert, Y. M. Coic, and P. Hesto, "Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions," IEEE Trans. Nucl. Sci., vol. 38, pp. 1226-1233, Dec. 1991.
89. K. Hirose, H. Saito, Y. Kuroda, S. Ishii, Y. Fukuoka, and D. Takahashi, "SEU resistance in advanced SOI-SRAM's fabricated by commercial technology using a rad-hard circuit design," IEEE Trans. Nucl. Sci., vol. 49, pp. 2965-2968, Dec. 2002.
90. V. F. Cavrois, O. Musseau, J. L. Leray, Y. M. Coïc, G. Lecarval, and E. Guichard, "Comparison of the sensitivity to heavy ions of SRAM's in different SIMOX technologies," IEEE Electron. Devices Lett., vol. 15, pp. 82-84, Mar. 1994.
91. V. Ferlet-Cavrois, O. Musseau, C. D'hose, C. Marcandella, G. Giraud, C. Fenouillet, and J. du Port de Poncharra, "Characterization of the parasitic bipolar amplification in SOI technologies submitted to transient irradiation," IEEE Trans. Nucl. Sci., vol. 49, pp. 1456-1461, June 2002.
92. E. P. Ver Ploeg, C. T. Nguyen, S. S. Wong, and J. D. Plummer, "Parasitic bipolar gain in fully depleted n-channel SOI MOSFET's," IEEE Trans. Electron. Devices, vol. 41, pp. 970-977, June 1994.
93. J. Y. Choi and J. G. Fossum, "Analysis and control of floating body bipolar effects in fully depleted submicrometer SOI MOSFET's," IEEE Trans. Electron. Devices, vol. 38, pp. 1384-1391, June 1991.