Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

IEEE Transactions on Nuclear Science

Volumn 47, Issue 6 III, 2000, Pages 2175-2182

  Schwank, J R ^a,b   Shaneyfelt, M R ^a,b   Dodd, P E ^a,b   Ferlet Cavrois, V ^a,c   Loemker, R A ^b   Winokur, P S ^a,b   Fleetwood, D M ^a,d   Paillet, P ^a,c   Leray, J L ^a,c   Draper, B L ^b   Witczak, S C ^a,b   Riewe, L C ^b  

^a IEEE   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c CEA DAM DIF   (France)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON ON INSULATOR BURIED OXIDES; X RAY RADIATION INDUCED CHARGE BUILDUP;

COBALT; ELECTRIC FIELDS; IRRADIATION; OXIDES; SUBSTRATES; X RAYS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0034451280     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.903750     Document Type: Conference Paper

References (27)

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