Reduction of radiation induced back channel threshold voltage shifts in partially depleted simox cmos devices by using advantox8 substrates

IEEE Transactions on Nuclear Science

Volumn 44, Issue 6 PART 1, 1997, Pages 2101-2105

  Liu, S T ^a   Alien, L P ^b   Anc, M J ^c   Jenkins, W C ^d   Hughes, H L ^a   Twigg, M E ^b   Lawrence, R K ^c  

^a HONEYWELL   (United States)

^b Ibis Technology Corp   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

^d Advanced Research & Applications Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION EFFECTS; SUBSTRATES;

RADIATION INDUCED BACK CHANNEL THRESHOLD VOLTAGE SHIFT; SEPARATION BY IMPLANTATION OF OXYGEN (SIMOX) TECHNOLOGY;

MOSFET DEVICES;

EID: 0031376267     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.659024     Document Type: Article

References (9)

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