Electron valence-band tunneling-induced Lorentzian noise in deep submicron silicon-on-insulator metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4461-4469

  Lukyanchikova, N B ^a   Petrichuk, M V ^a   Garbar, N ^a   Mercha, A ^b   Simoen, E ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; ELECTRON TUNNELING; GATES (TRANSISTOR); SHOT NOISE; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

BACK-GATE VOLTAGE;

MOSFET DEVICES;

EID: 0142023818     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1604452     Document Type: Article

References (20)

1. Gwoziecki, C. Raynaud, A. Roveda, and H. Brut, Proceedings ESSDERC 2002, edited by G. Baccarani, E. Gnani, and M. Rudan, The University of Bologna, Italy, p. 515 (2002).
2. T. Poiroux, O. Faynot, C. Tabone, H. Tigelaar, H. Mogul, N. Bresson, and S. Cristoloveanu, Proceedings of the 2002 IEEE International SOI Conference (IEEE, Piscataway, NJ, 2002), p. 99.
3. J. Pretet, T. Matsumoto, R. Gwoziecki, C. Raynaud, S. Cristoloveanu, T. Poiroux, and H. Brut, Proceedings of the 2002 IEEE International SOI Conference (IEEE, Piscataway, NJ, 2002), p. 101.
4. A. Mercha, J. M. Raff, E. Augendre, E. Simoen, and C. Claeys, J. Phys. IV 12, Pr3-61 (2002).
5. A. Mercha, J. M. Rafí, E. Simoen, C. Claeys, N. Lukyanchikova, M. Petrichuk, and N. Garbar, Proceedings of the Eleventh International Symposium on Silicon-on-Insulator Technology and Devices XI, edited by S. Cristoloveanu, G. K. Celler, J. G. Fossum, F. Gamiz, K. Izumi, and Y.-W. Kim (Electrochemical Society, Pennington, NJ, 2003), Vol. 2003-5, pp. 319-324.
6. F. Dieudonné, J. Jomaah, and F. Balestra, IEEE Electron Device Lett. 23, 737 (2002).
7. A. Mercha, E. Simoen, H. van Meer, and C. Claeys, Appl. Phys. Lett. 82, 1790 (2003).
8. E. Simoen, U. Magnusson, A. L. P. Rotondaro, and C. Claeys, IEEE Trans. Electron Devices 41, 330 (1994).
9. E. Simoen and C. Claeys, Solid-State Electron. 39, 949 (1996).
10. Y.-C. Tseng, W. M. Huang, M. Mendicino, D. Ngo, V. Ilderem, and J. C. S. Woo, Tech. Dig. - Int. Electron Devices Meet. 1998, 949 (1998).
11. G. O. Workman and J. G. Fossum, IEEE Trans. Electron Devices 47, 1192 (2000).
12. Y.-C. Tseng, W. M. Huang, M. Mendicino, D. J. Monk, P. J. Welch, and J. C. S. Woo, IEEE Trans. Electron Devices 48, 1428 (2001).
13. V. Dessard, B. Iňíguez, S. Adriaensen, and D. Flandre, IEEE Trans. Electron Devices 49, 1289 (2002).
14. H. van Meer and K. De Meyer, in Proceedings of the Tenth International Symposium on Silicon-on-Insulator Technology and Devices X, edited by S. Cristoloveanu, G. K. Celler, P. L. F. Hemment, F. Assaderaghi, K. T. Izumi, and Y.-W. Kim (Electrochemical Society, Pennington, NJ, 2001), Vol. 2001-3, p. 301-306.
15. A. Shanware, J. P. Shiely, H. Z. Massoud, E. Vogel, K. Henson, A. Srivastava, C. Osburn, J. R. Hauser, and J. J. Wortman, Tech. Dig. - Int. Electron Devices Meet. 1999, 815 (1999).
16. W.-C. Lee and C. Hu, IEEE Trans. Electron Devices 48, 1366 (2001).
17. A. Mercha, J. M. Rafí, E. Augendre, E. Simoen, and C. Claeys IEEE Trans. Electron Devices 50, 1675 (2003).
18. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
19. D. C. Mayer, IEEE Trans. Electron Devices 37, 1280 (1990).
20. B. Yu, IEICE Trans. Electron. E85-C, 1052 (2002).