Proton radiation effects in 0.35-μm partially depleted SOI MOSFETs fabricated on UNIBOND

IEEE Transactions on Nuclear Science

Volumn 49 I, Issue 6, 2002, Pages 2930-2936

  Li, Ying ^a   Niu, Guofu ^a   Cressler, John D ^b   Patel, Jagdish ^c   Marshall, Paul W ^d   Kim, Hak S ^e   Liu, Mike S T ^f   Reed, Robert A ^d   Palmer, Michael J ^a  

^a AUBURN UNIVERSITY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d NASA GODDARD SPACE FLIGHT CENTER   (United States)

^e Jackson and Tull Chartered Engineers   (United States)

^f HONEYWELL TECHNOLOGY CENTER   (United States)

Author keywords

Interface states; MOSFETs; Partially depleted; Proton; Radiation; SOI; UNIBOND

Indexed keywords

ENERGY GAP; FABRICATION; GATES (TRANSISTOR); PROTON IRRADIATION; THRESHOLD VOLTAGE;

BACK-GATE TRANSISTORS;

MOSFET DEVICES;

EID: 0036956678     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.805428     Document Type: Conference Paper

References (19)

1. M. Bruel, "Silicon on insulator material technology," Electron. Lett., vol. 31, no. 14, pp. 1201-1202, July 1995.
2. S. T. Liu, W. C. Jenkins, H. L. Hughes, and A. J. Auberton-Herve, "Total dose radiation induced back channel threshold voltage shifts and standby currents of CMOS devices fabricated in UNIBOND™ materials," in Proc. Electrochemical Soc., vol. PV97-23, 1997, pp. 307-312.
3. J. R. Schwank, M. R. Shaneyfelt, P. E. Dodd, V. Ferlet-Cavrois, R. A. Loemker, P. S. Winokur, D. M. Fleetwood, P. Paillet, J. L. Leray, B. L. Draper, S. C. Witezak, and L. C. Riewe, "Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides," IEEE Trans. Nucl. Sci., vol. 47, pp. 2175-2182, Dec. 2000.
4. V. Ferlet-Cavrois, T. Colladant, P. Paillet, J. L. Leray, O. Musseau, J. R. Schwank, M. R. Shaneyfelt, J. L. Pelloie, and J. du port de Poncharra, "Worst-case bias during total close irradiation of SOI transistors," IEEE Trans. Nucl. Sci., vol. 47, pp. 2183-2188, Dec. 2000.
5. S. T. Liu, W. C. Jenkins, and H. L. Hughes, "Total dose radiation hard 0.35-μm SOI CMOS technology," IEEE Trans. Nucl. Sci., vol. 45, pp. 2442-2449, Dec. 1998.
6. S. T. Liu, S. Balster, S. Sinha, and W. C. Jenkins, "Worst case total dose radiation response of 0.35-μm SOI CMOSFETs," IEEE Trans. Nucl. Sci., vol. 46, pp. 1817-1823, Dec. 1999.
7. W. C. Jenkins and S. T. Liu, "Total dose performance at 77 K of a radiation hard 0.35-μm CMOS SOI technology," IEEE Trans. Nucl. Sci., vol. 47, pp. 2204-2207, Dec. 2000.
8. K. M. Muray, W. J. Stapor, and C. Castenada, "Calibrated charge particle measurement system with precision dosimetric measurement and control," Nucl. Instrum. Methods, vol. B56/57, p. 616, 1991.
9. P. W. Marshall, C. J. Dale, M. A. Carts, and K. A. Label, "Particle-induced bit errors in high performance fiber optic data lines for satellite data management," IEEE Trans. Nucl. Sci., vol. 41, pp. 1958-1965, Dec. 1994.
10. G. Niu, J. D. Cressler, S. J. Mathew, and S. Subbanna, "Total resistance slope-based effective channel mobility extraction method for deep sub-micrometer CMOS technology," IEEE Trans. Electron Devices, vol. 46, pp. 1912-1914, Sept. 1999.
11. M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation," IEEE Trans. Nucl. Sci., vol. 45, pp. 2584-2592, Dec. 1998.
12. G. Niu, S. J. Mathew, G. Banerjee, J. D. Cressler, S. D. Clark, M. J. Palmer, and S. Subbanna, "Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35-μm SiGe BiCMOS technology," IEEE Trans. Nucl. Sci., vol. 46, pp. 1841-1847, Dec. 1999.
13. MEDICI 4.0, "2-D semiconductor device simulator," Avant! Corp., Fremont, CA, 1997.
14. K. M. Cham, S.-Y. Oh, D. Chin, and J. L. Moll, Computer-Aided Design and VLSI Device Development: Boston, MA: Kluwer, 1986.
15. S. T. Liu, H. Hughes, W. C. Jenkins, and L. Allen, "ADVANTOX™ more radiation resistant than full dose SIMOX," in Proc. IEEE Int. SOI Conf., Oct. 1997, pp. 148-149.
16. O. Flament, P. Paillet, and J. L. Leray, "Effect of supplemental dose in SIMOX on very high ionizing dose response," in Proc. Electrochemical Soc., vol. PV94-11, 1994, pp. 381-389.
17. J. L. Leray, "Assessment of SOI technologies for hardening," Microelectron. Eng., vol. 8, pp. 187-200, 1988.
18. T. Ushiki, K. Kotani, T. Funaki, K. Kawai, and T. Ohmic, "New aspects and mechanism of kink effects in static back-gate transconductance characteristics in fully-depleted SOI MOSFETs on high-dose SIMOX wafers," IEEE Trans. Electron Devices, vol. 47, pp. 360-366, Feb. 2000.
19. Y. Li, G. Niu, J. D. Cressler, J. Patel, C. J. Marshall, P. W. Marshall, H. S. Kim, R. A. Reed, and M. J. Palmer, "Anomalous radiation effects in fully-depleted SOI MOSFETs fabricated on SIMOX," IEEE Trans. Nucl. Sci., vol. 48, pp. 2146-2151, Dec. 2001.