Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX

IEEE Transactions on Nuclear Science

Volumn 48, Issue 6 I, 2001, Pages 2146-2151

  Li, Ying ^a   Niu, Guofu ^a   Cressler, John D ^a   Patel, Jagdish ^b   Marshall, Cheryl J ^c   Marshall, Paul W ^c   Kim, Hak S ^d   Reed, Robert A ^c   Palmer, Michael J ^a  

^a AUBURN UNIVERSITY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c NASA GODDARD SPACE FLIGHT CENTER   (United States)

^d Jackson and Tull Chartered Engineers   (United States)

Author keywords

Fully depleted; H gate; Kink; Proton; Radiation; Self annealing; SIMOX; SOI MOSFETs

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DOSIMETRY; ELECTRON TRAPS; ENERGY GAP; GATES (TRANSISTOR); INTERFACES (MATERIALS); LEAKAGE CURRENTS; LOW TEMPERATURE EFFECTS; PROTON IRRADIATION; RADIATION EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

SELF ANNEALING EFFECTS;

MOSFET DEVICES;

EID: 0035722172     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.983187     Document Type: Conference Paper

References (16)

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4. Fully-depleted submicron SOI for radiation hardened applications
5. Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor
6. Radiation response of fully-depleted MOS transistors fabricated in SIMOX
7. Calibrated charge particle measurement system with precision dosimetric measurement and control
8. Particle-induced bit errors in high performance fiber optic data lines for satellite data management
9. Comparisons and extension of recent surface potential models of fully depleted short-channel silicon-on-insulator MOSFET's
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11. 2 interfaces
12. Charge build up at high dose and low fields in SIMOX buried oxides
13. Physical mechanisms contributing to device rebound