Carrier recombination and thin gate oxide effects in floating body SOI MOSFETs: Influence of the device geometries and architectures

IEEE International SOI Conference

Volumn , Issue , 2002, Pages 101-102

  Pretet, J ^a,b   Matsumoto, T ^b   Gwoziecki, R ^c   Raynaud, C ^c   Cristoloveanu, S ^b   Poiroux, T ^c   Brut, H ^a  

^a STMICROELECTRONICS   (France)

^b IMEP LAHC   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; THIN FILM DEVICES;

FLOATING BODIES;

MOSFET DEVICES;

EID: 20244388081     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/soi.2002.1044435     Document Type: Conference Paper

References (3)

1. International technology roadmap for semiconductors, 1999 edition.
2. S. Cristoloveanu and S.S. Li, Electrical Characterization of SOI Materials and Devices, Kluwer, 1995.
3. W.C. Lee and C. Hu, Symp. on VLSI technology, pp. 198-199, 2000.