Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region

IEEE Electron Device Letters

Volumn 22, Issue 11, 2001, Pages 545-547

  Ang, D S ^a   Lun, Z ^a   Ling, C H ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Generation recombination noise; Lorentzian; Low frequency noise; SIMOX; SOI

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); SIGNAL NOISE MEASUREMENT; SILICON ON INSULATOR TECHNOLOGY; THICKNESS MEASUREMENT;

GENERATION RECOMBINATION NOISE; LORENTZIAN NOISE;

MOSFET DEVICES;

EID: 0035506344     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.962658     Document Type: Article

References (12)

1. Low frequency noise in SIMOX MOSFETs
2. Noise overshoot at drain current kink in SOI MOSFET
3. Noise contribution of the body resistance in partially-depleted SOI MOSFETs
4. Shot-noise-induced excess low-frequency noise in floating-body partially depleted SOI MOSFETs
5. Floating body induced pre-link excess low-frequency noise in submicron SOI CMOSFET technology
6. Physical noise modeling of SOI MOSFET's with analysis of the Lorentzian component in the low-frequency noise spectrum
7. The kink-related excess low-frequency noise in silicon-on-insulator MOST's
8. 2 interface
9. Back and front interface related generation-recombination noise in buried-channel SOI pMOSFETs
10. Low-frequency noise in near-fully-depleted TFSOI MOSFET's
11. Shallow defects responsible for GR noise in MOSFETs
12. Oxygen-related activity and other specific electrical properties of SIMOX