Remote hydrogen plasma chemical vapor deposition from (dimethylsilyl)(trimethylsilyl)methane. 1. Kinetics of the process; chemical and morphological structure of deposited silicon-carbon films

Chemistry of Materials

Volumn 15, Issue 8, 2003, Pages 1749-1756

  Wrobel A M ^a   Walkiewicz Pietrzykowska, A ^a   Klemberg Sapieha, J E ^b   Nakanishi, Y ^c   Aoki, T ^c   Hatanaka, Y ^c  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^c SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; FILM GROWTH; HYDROGEN; HYDROGENATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; REACTION KINETICS;

REMOTE HYDROGEN PLASMA CHEMICAL VAPOR DEPOSITION (RHP-CVD);

ORGANIC COMPOUNDS;

(DIMETHYLSILYL)(TRIMETHYLSILYL)METHANE; CARBON; HYDROGEN; SILICON; SILICON DERIVATIVE; UNCLASSIFIED DRUG;

ARTICLE; FILM; INFRARED SPECTROSCOPY; REACTION ANALYSIS; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; SYNTHESIS; TEMPERATURE DEPENDENCE;

EID: 0345204088     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm021250c     Document Type: Article

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