Remote microwave plasma chemical vapor deposition of thin Si:N:C films from a single-source precursor

Journal of Wide Bandgap Materials

Volumn 8, Issue 1, 2000, Pages 3-15

  Wrobel A M ^a   Walkiewicz Pietrzykowska, A ^a   Stasiak, M ^a   Klemberg Sapieha, J E ^b   Bielinski, D M ^c   Aoki, T ^d   Hatanaka, Y ^d  

^a CENTRE OF MOLECULAR AND MACROMOLECULAR STUDIES   (Poland)

^b ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^c LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

^d SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSSLINKING; CRYSTAL GROWTH; FILM GROWTH; HARDNESS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

PLASMA GENERATION; REMOTE PLASMA CHEMICAL VAPOR DEPOSITION (RP-CVD); SILICON CARBONITRIDE FILMS; SINGLE SOURCE COMPOUND;

THIN FILMS;

EID: 0012773804     PISSN: 1524511X     EISSN: None     Source Type: Journal    
DOI: 10.1106/EXYQ-1W9B-XFBL-EC2E     Document Type: Article

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