Wide band gap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition

Thin Solid Films

Volumn 355, Issue , 1999, Pages 205-209

  Chen, K H ^a   Wu, J J ^a   Wen, C Y ^b   Chen, L C ^b   Fan, C W ^b   Kuo, P F ^b   Chen, Y F ^b   Huang, Y S ^c  

^a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; GRAIN SIZE AND SHAPE; HIGH RESOLUTION ELECTRON MICROSCOPY; NUCLEATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON CARBIDE; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

SILICON CARBON NITRIDE;

FILM GROWTH;

EID: 0033310860     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00486-1     Document Type: Article

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