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Volumn 10, Issue 3, 2000, Pages 783-787

Effect of H2 addition on SiCN film growth in an electron cyclotron resonance plasma chemical vapor deposition reactor

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; HYDROGEN;

EID: 0034120285     PISSN: 09599428     EISSN: None     Source Type: Journal    
DOI: 10.1039/a908523h     Document Type: Article
Times cited : (12)

References (24)
  • 19
    • 0003520123 scopus 로고
    • US Department of Commerce, Technology Administration, National Institute of Standards and Technology, Standard Reference Data Program, Gaithersburg, MD
    • 19 F. Westly, D. H. Frizzell, J. T. Herron, R. F. Hampson and W. G. Mallard, NIST Chemical Kinetics Database, Version 6.01, US Department of Commerce, Technology Administration, National Institute of Standards and Technology, Standard Reference Data Program, Gaithersburg, MD, 1994.
    • (1994) NIST Chemical Kinetics Database, Version 6.01
    • Westly, F.1    Frizzell, D.H.2    Herron, J.T.3    Hampson, R.F.4    Mallard, W.G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.