First-principles study of electronic structure and electron energy-loss-spectroscopy (EELS) of transition-metal aluminates as high-k gate dielectrics

Applied Surface Science

Volumn 242, Issue 1-2, 2005, Pages 121-128

  Samantaray, C B ^a   Sim, H ^a   Hwang, H ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Ab initio calculation; Aluminates; EELS; Energy band structures; High k

Indexed keywords

ANNEALING; APPROXIMATION THEORY; BAND STRUCTURE; CHEMICAL BONDS; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; LEAKAGE CURRENTS; PERMITTIVITY; PROBABILITY DENSITY FUNCTION; SOLUBILITY; STOICHIOMETRY;

AN-INITIO CALCULATIONS; DENSITY FUNCTIONAL THEORY (DFT); ENERGY-BAND STRUCTURE; HIGH-K DIELECTRICS; LOCAL DENSITY APPROXIMATION (LDA);

ALUMINUM COMPOUNDS;

EID: 11844258195     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.08.004     Document Type: Article

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