Electron energy-loss spectroscopy analysis of interface structure of yttrium oxide gate dielectrics on silicon

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 676-678

  Niu, D ^a   Ashcraft, R W ^a   Chen, Z ^b   Stemmer, S ^b   Parsons, G N ^a  

^a North Carolina State University   (United States)

^b Rice University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE INSULATOR; GATE STACK ENGINEERING; HIGH DIELECTRIC CONSTANTS; INTERFACE STABILITIES; INTERFACE STRUCTURES; OXIDE GATE DIELECTRICS; SI(1 0 0); SILICATE FILM; SILICATE STRUCTURES; SILICON SURFACES;

CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DISSOCIATION; ELECTRON ENERGY LEVELS; ELECTRON SCATTERING; GATE DIELECTRICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACES (MATERIALS); SILICATES; SPECTRUM ANALYSIS; SURFACE REACTIONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; YTTRIUM; YTTRIUM OXIDE;

ELECTRON ENERGY LOSS SPECTROSCOPY;

EID: 79955993048     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1496138     Document Type: Article

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