Atomic scale effects of zirconium and hafnium incorporation at a model silicon/silicate interface by first principles calculations

IEEE Electron Device Letters

Volumn 22, Issue 1, 2001, Pages 14-16

  Kawamoto, Atsushi ^a   Jameson, John ^a   Griffin, Peter ^a   Cho, Kyeongjae ^a   Dutton, Robert ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CMOS INTEGRATED CIRCUITS; COMPUTER AIDED ENGINEERING; DIELECTRIC MATERIALS; HAFNIUM; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SILICATES; ZIRCONIUM;

ATOMIC SCALE EFFECTS; BULK OXIDE; FIRST PRINCIPLES CALCULATIONS; INTERFACIAL TRANSITION REGION; MODEL SILICATE INTERFACE; MODEL SILICON INTERFACE; TETRAHEDRAL BONDING;

SEMICONDUCTOR DEVICE MODELS;

EID: 0035120905     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.892429     Document Type: Article

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