Analysis of ultrathin SiO2 interface layers in chemical vapor deposition of Al2O3 on Si by in situ scanning transmission electron microscopy

Applied Physics Letters

Volumn 83, Issue 6, 2003, Pages 1187-1189

  Klie, R F ^a   Browning, N D ^b   Chowdhuri, A Roy ^c   Takoudis, C G ^c  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b University of California   (United States)

^c 1120 Science and Engineering Offices   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SILICA; X RAY PHOTOELECTRON SPECTROSCOPY;

POSTDEPOSITION ANNEALING;

THIN FILMS;

EID: 0042425903     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1597415     Document Type: Article

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